Related papers: Si/SiGe quantum dot with superconducting single-el…
Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by $1/f$ charge noise. We investigate theoretically fluctuations of ground…
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required,…
The single electron transistor (SET) is a prime candidate for reading out the final state of a qubit in a solid state quantum computer. Such a measurement requires the detection of sub-electron charge motion in the presence of random…
Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and…
We study the transport properties of a quantum dot (QD) with highly resistive gate electrodes, and show that the QD displays a quantum phase transition analogous to the famous dissipative phase transition first identified by S. Chakravarty…
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and…
We report the transport measurements on the InAs self-assembled quantum dots (SAQDs) which have a unique structural zero-dimensionality, coupled to a superconducting quantum interference device (SQUID). Owing to the SQUID geometry, we…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…
We analyze heat and charge transport through a single-level quantum dot coupled to two BCS superconductors at different temperatures to first order in the tunnel coupling. In order to describe the system theoretically, we extend a real-time…
Gate-defined semiconductor quantum dots require an appropriate number of electrons to function as qubits. The number of electrons is usually tuned by analyzing charge stability diagrams, in which charge transitions manifest as edges.…
We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation doping, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade…
A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot…
We propose a highly efficient thermoelectric diode device built from the coupling of a quantum dot with a normal or ferromagnetic electrode and a superconducting reservoir. The current shows a strongly nonlinear behavior in the forward…
Silicon-Germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to eletro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving…
We study the entanglement of a two-qubit system in a superconducting quantum dot (SQD) lattice in the presence of magnetic flux and gate voltage inhomogeneity. We observe a universal feature for the half-integer magnetic flux quantum which…
We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side…
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate…
Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and…
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties…
Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales.…