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In this paper the results of numerical simulation of monolayer graphene in external magnetic field are presented. The numerical simulation is performed in the effective lattice field theory with noncompact $3 + 1$-dimensional Abelian…

High Energy Physics - Lattice · Physics 2014-06-13 D. L. Boyda , V. V. Braguta , S. N. Valgushev , M. I. Polikarpov , M. V. Ulybyshev

We have developed a method for depositing graphene monolayers and bilayers with minimum lateral dimensions of 2-10 nm by the mechanical exfoliation of graphite onto the Si(100)-2x1:H surface. Room temperature, ultra-high vacuum (UHV)…

Materials Science · Physics 2009-11-13 Kyle A. Ritter , Joseph W. Lyding

The curvature-corrected field emission current density, obtained by linearizing at or below the Fermi energy, is investigated. Two special cases, corresponding to the peak of the normal energy distribution and the mean normal energy, are…

Applied Physics · Physics 2023-03-15 Debabrata Biswas , Rajasree Ramachandran

The effective electrical permittivity of a graphene monolayer is experimentally investigated in the 5-40 GHz range, which encompasses the microwave and the lower part of millimeterwave spectrum. The measurements were carried out using a…

Mesoscale and Nanoscale Physics · Physics 2013-09-05 Alina Cismaru , Mircea Dragoman , Adrian Dinescu , Daniela Dragoman , G. Stavrinidis , G. Konstantinidis

We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few…

Mesoscale and Nanoscale Physics · Physics 2010-01-13 H. M. Wang , Z. Zheng , Y. Y. Wang , J. J. Qiu , Z. B. Guo , Z. X. Shen , T. Yu

The paper reports on top-down nanofabricated Ni3Si2 nanowires and tests of their electron field emission capabilities. The results include low turn on electric field, moderate work function, and the field enhancement factor, customizable…

Mesoscale and Nanoscale Physics · Physics 2022-01-12 Amina B. Belkadi , Emma Zeng , A. F. Isakovic

This study investigates the nanoscale conductivity of encapsulated monolayer graphene at temperatures down to 5 K and magnetic fields of up to 1 T. We use the scattering-type scanning near-field optical microscopy (s-SNOM) technique to…

We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 L. DiCarlo , J. R. Williams , Yiming Zhang , D. T. McClure , C. M. Marcus

In papers on cold field electron emission from large area field emitters (LAFEs), it has become widespread practice to publish a misleading Fowler-Nordheim-type (FN-type) equation. This equation over-predicts the LAFE-average current…

Mesoscale and Nanoscale Physics · Physics 2018-12-18 Richard G. Forbes

Recent advancements in nanofabrication have enabled the creation of vacuum electronic devices with nanoscale free space gaps. These nanoelectronic devices promise the benefits of cold-field emission and transport through free-space, such as…

Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 F. Molitor , D. Graf , C. Stampfer , T. Ihn , K. Ensslin

We demonstrate terahertz (THz) imaging and spectroscopy of a 15x15-mm^2 single-layer graphene film on Si using broadband THz pulses. The THz images clearly map out the THz carrier dynamics of the graphene-on-Si sample, allowing us to…

The classic theory of electron field emission from a cold metal surface due to Fowler and Nordheim (FN) is re-examined and found to violate the validity criteria for the WKB approximation, for electric fields greater than about 1V per…

Materials Science · Physics 2015-06-24 T. C. Choy , A. H. Harker , A. M. Stoneham

The mechanical and electronic properties of a graphene membrane placed on top of a superlattice of nanopillars are investigated. We use molecular dynamics (MD) simulations to access the deformation fields and the tight-binding approaches to…

Mesoscale and Nanoscale Physics · Physics 2019-02-20 S. P. Milovanovic , L. Covaci , F. M. Peeters

Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…

Using ab initio density functional theory and quantum transport calculations based on nonequilibrium Green's function formalism we study structural, electronic, and transport properties of hydrogen-terminated short graphene nanoribbons…

Materials Science · Physics 2010-05-20 Hasan Sahin , Ramazan Tugrul Senger

Field emission from nano-structured emitters primarily takes place from the tips. Using recent results on the variation of enhancement factor around the apex (Biswas et al, Ultramicroscopy 185, 1-4 (2018)), analytical expressions for…

Applied Physics · Physics 2018-05-24 Debabrata Biswas

Current theoretical description of field-induced electron emission remains mostly bounded by the classic Fowler-Nordheim (FN) framework developed nearly one century ago. For the emerging class of two-dimensional (2D) materials, many basic…

Mesoscale and Nanoscale Physics · Physics 2017-11-17 Yee Sin Ang , M. Zubair , K. J. A. Ooi , L. K. Ang

A modified cathodic arc technique has been used to deposit carbon nitride thin films directly on n+ Si substrates. Transmission Electron Microscopy showed that clusters of fullerene-like nanoparticles are embedded in the deposited material.…

Materials Science · Physics 2009-10-31 I. Alexandrou , M. Baxendale , G. A. J. Amaratunga , N. L. Rupesinghe , C. J. Kiely

We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high-k dielectric tantalum oxide encapsulated layer (a few nanometers thick) placed by atomic layer deposition on Si3N4. A…

Materials Science · Physics 2021-03-30 Yifei Wang , Vinh X. Ho , Zachary. N. Henschel , Michael P. Cooney , Nguyen Q. Vinh