Related papers: Transmission Electron Microscopy Studies on RF Spu…
We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591…
Epitaxially grown full Heusler alloy of Rh2MnSb thin films were prepared for the first time using DC magnetron sputtering. The films were deposited on MgO [001] substrates with a deposition temperature of 600{\deg}C, 700{\deg}C, and…
In order to get homogeneous nanostructured Aluminum Nitride deposits, thin films were grown at room temperature on [001] Si substrates by radio frequency magnetron reactive sputtering. The deposits were analysed by Transmission Electron…
We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and…
Time-domain THz transmission experiment was performed on a $\rm SrBi_2Ta_2O_9$ film deposited on sapphire substrate. Temperatures between 300 and 923 K were investigated and complex permittivity spectra of the film were determined. The…
Refractory metals that can withstand at high temperatures and harsh conditions are of utmost importance for solar-thermal and energy storage applications. Thin films of TiN have been deposited using cathodic vacuum arc deposition (CVA) at…
Thin films of superconducting V$_3$Si were prepared by means of RF sputtering from a compound V$_3$Si target at room temperature onto sapphire and oxide-coated silicon wafers, followed by rapid thermal processing under secondary vacuum. The…
We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for…
We report a Raman scattering investigation of KTa1-xNbxO3 (x = 0.35, 0.5) thin films deposited on MgO and LaAlO3 as a function of temperature. The observed phase sequence in the range from 90 K to 720 K is similar to the structural phase…
Silver films were deposited at room temperature onto H-passivated Si(111) surfaces. Their electronic properties have been analyzed by angle-resolved photoelectron spectroscopy. Submonolayer films were semiconducting and the onset of…
LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and…
MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C.…
Lowering the operating temperature of Solid Oxide Fuel Cells (SOFCs) is essential for improving durability and enabling large scale commercialization. Mixed ionic-electronic conductors (MIECs) of the Ruddlesden-Popper family, such as…
Here we present a magnetic thin film with a weak ferrimagnetic (FIM) phase above the N\'eel temperature ($T_{N}$ = 240 K) and a non-collinear antiferromagnetic (AFM) phase below, exhibiting a small net magnetisation due to strain-associated…
Thin films of magnetite (Fe3O4) are grown on single crystal GaAs (100) substrate by pulsed laser deposition. X ray diffraction (XRD) result shows the (111) preferred orientation of the Fe3O4 film and x-ray photoelectron spectroscopy confirm…
Superconducting thin films of MgB2 were deposited by Pulsed Laser Deposition on magnesium oxide and sapphire substrates. Samples grown at 450C in an argon buffer pressure of about 10-2 mbar by using a magnesium enriched target resulted to…
We present time-domain THz spectroscopy of thin films of the heavy-fermion superconductor CeCoIn$_5$. Below the $\approx$ 40 K Kondo coherence temperature, a narrow Drude-like peak forms, as the result of the $f$ orbital - conduction…
This paper reports that ~10-nm-thick FeSe thin films exhibit insulator-like behavior in terms of the temperature dependence of their electrical resistivity even though bulk FeSe has a metallic electronic structure that has been confirmed by…
We have studied the influence of annealing treatment on the crystalline growth of SrFe_12_O_19 previously deposited on Si (100) substrates using radio frequency (RF) magnetron sputtering. For this goal, two grown films, with and without…
Susceptibility measurements of patterned thin films at sub-K temperatures were carried out using a scanning SQUID microscope that can resolve signals corresponding to a few hundred Bohr magnetons. Several metallic and insulating thin films,…