Related papers: Transmission Electron Microscopy Studies on RF Spu…
Copper ferrite thin films were deposited on amorphous quartz substrates. The as deposited films were annealed in air and either quenched or slow cooled. Magnetization studies were carried out on the as deposited as well as annealed films…
The copper ferrite thin films have been deposited by RF sputtering at a 50W rf power. The As-deposited films are annealed in air at $800^{\circ}$C and then slow cooled. The As-deposited (AD) as well as slow cooled (SC) films are studied…
5$\mu$m thick NdFeB films have been sputtered onto 100 mm Si substrates using high rate sputtering (18 $\mu$m/h). Films were deposited at ≤ 500 C and then annealed at 750 C for 10 minutes. While films deposited at temperatures up to…
The rf sputtered copper ferrite films contain nanocrystalline grains. In these films, the magnetization does not saturate even in high magnetic fields. This phenomenon of high field susceptibility is attributed to the defects and/or…
CoFe2O4 thin films (5 nm and 20 nm thick) were grown by oxygen assisted molecular beam epitaxy on Pt(111) at 523~K and subsequently annealed at 773 K in vacuum or oxygen. They were characterized in-situ using Auger Electron Spectroscopy,…
We report the reduction in residual stress of AlN thin films and also the crystal structure, surface morphology and nanomechanical properties of magnetron sputtered as a function of substrate temperature (Ts, 35 - 600 ?C). The residual…
Room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-\delta (101) epitaxial thin films were grown on r-sapphire substrates by a dc sputtering method. Ferromagnetic magnetization, magnetic circular dichroism, and anomalous Hall…
Chromium thin films deposited on silicon substrates by DC magnetron sputtering were systematically investigated as a function of film thickness, using a DC power of 50 W and a post-deposition annealing temperature of 200 C. Two types of…
We report the deposition of thin Co$_2$FeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L2$_1$ ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on Al$_2$O$_3$(110) show several…
Electron transport is studied in surface oxidized single-crystal copper thin films with a thickness of up to 5.6 nm by applying density functional theory and density functional tight binding methods to determine electron transport…
The presumably unconventional superconductor Beta-FeSe was deposited by radio frequency sputtering and molecular beam epitaxy (MBE) from two elementary sources. Superconducting thin films were grown in (001)-orientation on MgO(100) and…
Lead based relaxor ferroelectric thin films have been of technological importance due to excellent properties for several commercial applications. However subtleness and high cost of fabrication have plagued of these materials. In this work…
Copper oxide thin films are deposited on quartz substrates by DC magnetron sputtering and the effect of deposition temperature on their optoelectronic properties is examined in detail. Scanning Electron Microscopy (SEM), X-ray diffraction…
Nanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates by r. f. magnetron sputtering at room temperature to study the correlation between 1.54 $\mu$m IR photoluminescence (PL) intensity, AlN crystalline structure and…
Ta (100 nm) / NdFeB (5 $\mu$m) / Ta (100 nm) films have been deposited onto Si substrates using triode sputtering (deposition rate ~ 18 $\mu$m/h). A 2-step procedure was used : deposition at temperatures up to 400 C followed by ex-situ…
We present room temperature ferromagnetic resonance (FMR) studies of polycrystalline ||Pt/10 nm Cu/t Co/10 nm Cu/Pt|| films as a function of Co layer thickness (1 < t < 10 nm) grown by evaporation and magnetron sputtering. FMR was studied…
Raman studies of nanocomposite SiCN thin film by sputtering showed that with an increase of substrate temperature from room temperature to 500oC, a transition from mostly sp2 graphitic phase to sp3 carbon took place which was observed from…
Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect…
Epitaxial copper thin films were deposited by magnetron sputtering. The adatoms during deposition are influenced by deposition parameters which cause variations in thin film properties. XRD and FESEM studies were done to get an insight into…
Very recently there was a report of the discovery using piezoelectric force microscopy (PFM) of a switchable ferroelectric polarization in 1.6 % tensile strained TiO2 thin film with anatase crystal structure (see N. Deepak et al. Adv.…