Related papers: Gaps tunable by electrostatic gates in strained gr…
Recent introduction of superlattice potentials has opened new avenues for engineering tunable electronic band structures featuring topologically nontrivial moir\'{e}-like bands. Here we consider optoelectronic properties of Bernal-stacked…
The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite…
Serpentine interconnects are highly stretchable and frequently used in flexible electronic systems. In this work, we show that the undulating geometry of the serpentine interconnects will generate phononic band gaps to manipulate elastic…
The recent discovery of correlated insulator states and superconductivity in magic-angle twisted bilayer graphene has paved the way to the experimental investigation of electronic correlations in tunable flat band systems realized in…
We suggest that physics underlying the recently observed removal of sublattice and spin degeneracies in graphene in a strong magnetic field describes a phase transition connected with the generation of an excitonic gap. The experimental…
We show through both theoretical arguments and numerical calculations that graphene discerns an unconventional sequence of quantized Hall conductivity, when subject to both magnetic fields (B) and strain. The latter produces time-reversal…
We revise the tight binding approach to strained or curved graphene in the presence of external probes such as Photoemission or Scanning Tunneling Microscopy experiments. We show that extra terms arise in the continuum limit of the tight…
Bilayer graphene twisted by a small angle shows a significant charge modulation away from neutrality, as the charge in the narrow bands near the Dirac point is mostly localized in the regions of the Moir\'e pattern with $AA$ stacking. The…
The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the…
Heterostructures of atomically-thin materials have attracted significant interest owing to their ability to host novel electronic properties fundamentally distinct from their constituent layers. In the case of graphene on boron nitride, the…
Due to low dimensionality, the controlled stacking of the graphene films and their electronic properties are susceptible to environmental changes including strain. The strain-induced modification of the electronic properties such as the…
We describe the formation of superconducting states in graphene in the presence of pseudo-Landau levels induced by strain, when time reversal symmetry is preserved. We show that superconductivity in strained graphene is quantum critical…
Using ab-initio methods, we show that the uniform deformation either leaves graphene (semi)metallic or opens up a small gap yet only beyond the mechanical breaking point of the graphene, contrary to claims in the literature based on…
The gap equation for Dirac quasiparticles in monolayer graphene in constant magnetic and pseudomagnetic fields, where the latter is due to strain, is studied in a low-energy effective model with contact interactions. Analyzing solutions of…
In this research work, the 2D structure of the germanene layer is compounded with 2D group-III phosphides: AlP and GaP. The planar structure of AlP and low-buckled GaP have been taken to form the bilayer patterns. In each case, three…
As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the…
Materials with flat electronic bands often exhibit exotic quantum phenomena owing to strong correlations. Remarkably, an isolated low-energy flat band can be induced in bilayer graphene by simply rotating the layers to 1.1$^{\circ}$,…
The extraordinary electronic properties of graphene, such as its continuously gate-variable ambipolar field effect and the resulting steep change in resistivity, provided the main thrusts for the rapid advance of graphene electronics. The…