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Electron-electron interactions play an important role in graphene and related systems and can induce exotic quantum states, especially in a stacked bilayer with a small twist angle. For bilayer graphene where the two layers are twisted by a…

Electrostatic gating offers elegant ways to simultaneously strain and dope atomically thin membranes. Here, we report on a detailed \textit{in situ} Raman scattering study on graphene, suspended over a Si/SiO$_2$ substrate. In such a…

Mesoscale and Nanoscale Physics · Physics 2017-01-30 Dominik Metten , Guillaume Froehlicher , Stéphane Berciaud

Lacking a band gap largely limits the application of graphene in electronic devices. Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene. Here, we…

Materials Science · Physics 2013-01-11 Jiangtao Wu , Xinghua Shi , Yujie Wei

Twisted bilayer graphene has recently attracted a lot of attention for its rich electronic properties and tunability. Here we show that for very small twist angles, $\alpha \ll 1^\circ$, the application of a perpendicular electric field is…

Mesoscale and Nanoscale Physics · Physics 2018-10-04 A. Ramires , J. L. Lado

Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The…

Mesoscale and Nanoscale Physics · Physics 2011-01-25 M. F. Craciun , S. Russo , M. Yamamoto , S. Tarucha

Moir'e patterns in the pseudo-magnetic field and in the strain profile of graphene (GE) when put on top of a hexagonal lattice substrate are predicted from elasticity theory. %which are confirmed by atomistic simulations. The van der Waals…

Mesoscale and Nanoscale Physics · Physics 2015-06-22 M. Neek-Amal , F. M. Peeters

Under the application of a force, a material will deform and, hence, the crystal lattice will experience strain. This induced strain will alter the electronic properties of the material. In particular, strain in graphene generates an…

Mesoscale and Nanoscale Physics · Physics 2014-07-08 J. A. Crosse

Strain-inducing deformations in graphene alter charge distributions and provide a new method to design specific features in the band structure and transport properties. Novel approaches implement engineered substrates to induce specifically…

Mesoscale and Nanoscale Physics · Physics 2021-01-04 Md Tareq Mahmud , Nancy Sandler

We show that surface plasmons of a two-dimensional Dirac metal such as graphene can be reflected by line-like perturbations hosting one-dimensional electron states. The reflection originates from a strong enhancement of the local optical…

Mesoscale and Nanoscale Physics · Physics 2016-08-24 Bor-Yuan Jiang , Guangxin Ni , Cheng Pan , Zhe Fei , Bin Cheng , Chun Ning Lau , Marc Bockrath , Dimitri N. Basov , Michael M. Fogler

Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual…

A unique attribute of atomically thin quantum materials is the in-situ tunability of their electronic band structure by externally controllable parameters like electrostatic doping, electric field, strain, electron interactions, and…

High mobility single and few-layer graphene sheets are in many ways attractive as nanoelectronic circuit hosts but lack energy gaps, which are essential to the operation of field-effect transistors. One of the methods used to create gaps in…

Mesoscale and Nanoscale Physics · Physics 2018-12-26 Hakseong Kim , Nicolas Leconte , Bheema L. Chittari , Kenji Watanabe , Takashi Taniguchi , Allan H. MacDonald , Jeil Jung , Suyong Jung

We present a tight-binding investigation of strained bilayer graphene within linear elasticity theory, focusing on the different environments experienced by the A and B carbon atoms of the different sublattices. We find that the…

Materials Science · Physics 2012-08-17 B. Verberck , B. Partoens , F. M. Peeters , B. Trauzettel

One of the enticing features common to most of the two-dimensional electronic systems that are currently at the forefront of materials science research is the ability to easily introduce a combination of planar deformations and bending in…

Mesoscale and Nanoscale Physics · Physics 2014-09-29 Gareth Wyn Jones , Vitor M. Pereira

Hexagonal Boron Nitride substrates have been shown to dramatically improve the electric properties of graphene. Recently, it has been observed that when the two honeycomb crystals are close to perfect alignment, strong lattice distortions…

Mesoscale and Nanoscale Physics · Physics 2014-10-08 Pablo San-Jose , Ángel Gutiérrez , Mauricio Sturla , Francisco Guinea

By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…

Mesoscale and Nanoscale Physics · Physics 2014-04-03 Viet Hung Nguyen , Huy Viet Nguyen , Philippe Dollfus

Motivated by recent proposals on strain-engineering of graphene electronic circuits we calculate conductivity, shot-noise and the density of states in periodically deformed graphene. We provide the solution to the Dirac-Kronig-Penney model,…

Mesoscale and Nanoscale Physics · Physics 2010-10-13 S. Gattenloehner , W. Belzig , M. Titov

Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great…

Strain fold-like deformations on armchair graphene nanoribbons (AGNRs) can be properly engineered in experimental setups, and could lead to a new controlling tool for gaps and transport properties. Here, we analyze the electronic properties…

Mesoscale and Nanoscale Physics · Physics 2017-03-08 V. Torres , C. Leon , D. Faria , A. Latge

By means of the first-principles calculations combined with the tight-binding approximation, the strain-induced semiconductor-semimetal transition in graphdiyne is discovered. It is shown that the band gap of graphdiyne increases from 0.47…

Materials Science · Physics 2017-09-13 Hui-Juan Cui , Xian-Lei Sheng , Qing-Bo Yan , Qing-Rong Zheng , Gang Su