Related papers: High frequency limit for single-electron pumping o…
We investigate electric current in a single-electron tunnelling device weakly coupled to an ac-driven underdamped harmonic nanomechanical oscillator. In the linear regime, the current can respond to the external frequency in a resonant as…
Single-electron escape from a metastable state over an oscillating barrier is experimentally investigated in silicon-based ratchet transfer. When the barrier is oscillating on a time scale characteristic of the single-electron escape,…
A well-characterised sample of silicon tunable-barrier electron pump has been operated at a frequency of 2 GHz using a custom drive waveform, generating a pump current of 320 pA. Precision measurements of the current were made as a function…
We have analyzed energy dissipation in a digital device (``Single-Electron Parametron'') in which discrete degrees of freedom are used for presenting digital information. If the switching speed is not too high, the device may operate…
Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at…
We derive an $n$-resolved Master equation for quantum transport that includes a dependence on the number $n$ of tunneled electrons in system parameters such as tunnel rates and energy levels. We apply the formalism to describe dynamical…
Fully quantized mechanical motion of a single-level quantum dot coupled to two voltage biased electronic leads is studied. It is found that there are two different regimes depending on the applied voltage. If the bias voltage is below a…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
We present a low-temperature experimental test of the fluctuation theorem for electron transport through a double quantum dot. The rare entropy-consuming system trajectories are detected in the form of single charges flowing against the…
We theoretically study electronic transport through a layer of quantum dots connecting two metallic leads. By the inclusion of an inductor in series with the junction, we show that steady electronic transport in such a system may be…
We demonstrate single-electron pumping in a gate-defined carbon nanotube double quantum dot. By periodic modulation of the potentials of the two quantum dots we move the system around charge triple points and transport exactly one electron…
Nanoscale resonators that oscillate at high frequencies are useful in many measurement applications. We studied a high-quality mechanical resonator made from a suspended carbon nanotube driven into motion by applying a periodic radio…
In this paper the scattering rates of electrons in thin free standing GaAs quantum wires in the electric quantum limit are calculated self-consistently taking into account the collisional broadening caused by scattering processes. The…
We study thermal conductance and thermopower of a metallic single-electron transistor beyond the limit of weak tunnel coupling. Employing both a systematic second-order perturbation expansion and a non-perturbative approximation scheme, we…
We propose a Heterojunction Vertical Tunneling FET and show using self-consistent ballistic quantum transport simulations that it can provide very steep subthreshold swings and high ON current, thereby improving the scalability of Tunnel…
We investigate the behavior of quasiparticles in a hybrid electron turnstile with the aim of improving its performance as a metrological current source. The device is used to directly probe the density of quasiparticles and monitor their…
We perform the quantum analysis of the light emitted by a synchronously pumped optical parametric oscillator operating in the above threshold regime, i.e. when the peak power of pulsed pumping exceeds the threshold of continuous generation.…
We consider the electronic current through a one-dimensional conductor in the ballistic transport regime and show that the quantum oscillations of a weakly pinned single scattering target results in a temperature- and bias-voltage…
We report on measurements on a sample consisting of two nominally identical single-electron transistors the islands of which are coupled capacitively. One transistor at a time is operated as electron box. The remaining transistor is used as…
We have investigated the effects of quantum fluctuations of quasiparticles on the operation of superconducting radio-frequency single-electron transistors (RF-SETs) for large values of the quasiparticle cotunneling parameter…