Related papers: High frequency limit for single-electron pumping o…
Electron counting statistics of a current pump in an open system has universal form in the weak pumping current regime. In the time domain, charge transmission is described by two uncorrelated Poisson processes, corresponding to electron…
Quantum technologies involving qubit measurements based on electronic interferometers rely critically on accurate single-particle emission. However, achieving precisely timed operations requires exquisite control of the single-particle…
We investigate the noise properties of pump currents through molecular wires and coupled quantum dots. As a model we employ a two level system that is connected to electron reservoirs and is non-adiabatically driven. Concerning the…
A current due to a tunneling event that involves three times the charge of an electron was observed in the current - voltage characteristics of a superconducting single-electron tunneling transistor. In this tunnel event, a Cooper pair…
We study non-equilibrium magneto-transport through a single electron transistor or an impurity. We find that due to spin-flip transitions, generated by the spin-orbit interaction, the spectral density of the tunneling current fluctuations…
Pure spin current is a powerful tool for manipulating spintronic devices, and its dynamical behavior is an important issue. By using mesoscopic transport theory for electron tunneling induced by spin accumulation, we investigate the…
We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic…
Electron tunneling between quantum Hall systems on the same two dimensional plane separated by a narrow barrier is studied. We show that in the limit where inelastic scattering time is much longer than the tunneling time, which can be…
We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through…
We consider the problem of interacting electrons constrained to move on a fluctuating one-dimensional string. An effective low-energy theory for the electrons is derived by integrating out the string degrees of freedom to lowest order in…
We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of…
Two-dimensional electron gas coupled to adjacent impurity sites in high-frequency out-of-plane ac control electric field is investigated. Modification of tunneling rates as a function of the field amplitude is calculated. Nonlinear…
We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states and to identify their relaxation paths. Exponential…
Recent developments in the coherent manipulation of electrons in ballistic conductors include the generation of time-periodic electrical currents involving one to few electronic excitations per period. However, using individual electrons as…
We find that if two superconducting islands of different number parity are linked by a tunnel junction the unpaired electron in the odd island has a tendency to tunnel into the even island. This process leads to fluctuations in time of the…
A single electron shared between two levels threaded by a magnetic flux is an irreducibly simple quantum system in which interference is predicted to occur. We demonstrate tuning of the tunnel coupling between two such electronic levels…
We study electron transfer between two separated nuclei using local control theory. By conditioning the algorithm in a symmetric system formed by two protons, one can favored slow transfer processes, where tunneling is the main mechanism,…
We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…
For a flux qubit described by a two-level system of equations we propose a special time dependent external control field. We show that for a qubit placed in this field there exists a critical value of tunnel frequency. When the tunnel…
High frequency transformers are an integral part of power electronics devices and their parasitic parameters influence the performance and efficiency of the overall system. In this paper, transformer leakage inductances and parasitic…