Related papers: Comparison between charge and spin transport in fe…
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…
We report on transport properties of monolayer graphene with a laterally modulated potential profile, employing striped top gate electrodes with spacings of 100 nm to 200 nm. Tuning of top and back gate voltages gives rise to local charge…
Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…
Spin transport characteristics of graphene has been extensively studied so far. The spin transport along c-axis is however reported by rather limited number of papers. We have studied spin transport characteristics through graphene along…
We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and…
Organic and carbon-based materials are attractive for spintronics because their small spin-orbit coupling and low hyperfine interaction is expected to give rise to large spin-relaxation times. However, the corresponding spin-relaxation…
Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…
Graphene has attracted great attentions since its first discovery in 2004. Various approaches have been proposed to control its physical and electronic properties. Here, we report that graphene based intercalation compounds is an efficient…
Multilayer graphene (MLG) thin films are deposited on silicon oxide substrates by mechanical exfoliation (or 'scotch-tape method') from Kish graphite. The thickness and number of layers are determined from both Atomic Force Microscopy (AFM)…
Graphene-derived nanomaterials are emerging as ideal candidates for postsilicon electronics. Elucidating the electronic interaction between an insulating substrate and few-layer graphene (FLG) films is crucial for device applications. Here,…
We investigate spin and charge transport in both single and bilayer graphene non-local spin-valve devices. Similar to previous studies on bilayer graphene, we observe an inverse dependence of the spin lifetime on the carrier mobility in our…
Graphitic nanostructures, e.g. carbon nanotubes (CNT) and graphene, have been proposed as ideal materials for spin conduction[1-7]; they have long electronic mean free paths[8] and small spin-orbit coupling[9], hence are expected to have…
The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage ($V_g$) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in…
We measure the transport properties of two-dimensional ultracold Fermi gases during transverse demagnetization in a magnetic field gradient. Using a phase-coherent spin-echo sequence, we are able to distinguish bare spin diffusion from the…
We investigate electronic transport in twisted bilayer graphene (tBLG) under variable temperatures ($T$), carrier densities ($n$), and transverse magnetic fields, focusing on samples with small-twist-angles ($\theta$). These samples show…
Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO$_2$ substrate is used to fabricate these devices for efficient gating.…
Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD…
The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…
Recently, it has been shown that oxide barriers in graphene-based non-local spin-valve structures can be the bottleneck for spin transport. The barriers may cause spin dephasing during or right after electrical spin injection which limit…
Spin transport properties of graphene non-local spin valve devices are typically determined from Hanle spin precession measurements by using a simplified solution of the one-dimensional Bloch-Torrey equation which assumes infinitely long…