Related papers: Memory effects in complex materials and nanoscale …

In this article we give a general survey of the main properties of magnetic oxides - mostly the oxides of transition metals, but sometime also containing rare earths ions. This is a very rich class of materials, among which there are…

Dynamic reconfiguration of charge carriers in confined ion-channels under electrical stimulation produces memory effects, where the internal resistance depends on history of the electric field. Vermiculite nanofluidic devices harness this…

We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal…

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…

The initial state of a quantum system can significantly influence its future dynamics, especially in non-Markovain quantum processes due to the environmental memory effects. Based on a previous work of ours, we propose a method to quantify…

The understanding of the nanoscale physical properties of biomolecules and biomaterials will ultimately promote the research in the biological sciences. In this review, we focused on theory, simulation, and experiments involving nanoscale…

Using a nonequilibrium Monte Carlo method suitable to nanomagnetism, we investigate representative systems of interacting sub-10nm grained nanomagnets with large uniaxial anisotropy. Various magnetization memory and aging effects are found…

Memristors, memcapacitors, and meminductors, collectively called memelements, represent an innovative generation of circuit elements whose properties depend on the state and history of the system. The hysteretic behavior of one of their…

This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…

Non-Markovian processes may arise in physics due to memory effects of environmental degrees of freedom. For quantum non-Markovianity, it is an ongoing debate to clarify whether such memory effects have a verifiable quantum origin, or…

Friction is a phenomenon that manifests across all spatial and temporal scales, from the molecular to the macroscopic scale. It describes the dissipation of energy from the motion of particles or abstract reaction coordinates and arises in…

We investigate the memory effects under oscillatory shear deformation of amorphous solids through computer simulations. Applications of shear deformations in all orthogonal directions show that encoded memories via this protocol are more…

Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…

Quantum memory effects can be induced even when the degrees of freedom associated to the environment are not affected at all during the system evolution. In this paper, based on a bipartite representation of the system-environment dynamics,…

The memristance of a memristor depends on the amount of charge flowing through it and when current stops flowing through it, it remembers the state. Thus, memristors are extremely suited for implementation of memory units. Memristors find…

The object of this article is to review the development of ultrahigh-density, nanoscale data storage, i.e., nanostorage. As a fundamentally new type of storage system, the recording mechanisms of nanostorage may be completely different to…

The developing of (non-Markovian) memory effects strongly depends on the underlying system-environment dynamics. Here we study this problem in multipartite arrangements where all subsystems are coupled to each other by non-diagonal…

Because of the potentially large number of important applications of nonlinear optics, researchers have expended a great deal of effort to optimize the second-order molecular nonlinear-optical response, called the hyperpolarizability. The…

We discuss the properties of the dynamics of purely memristive circuits using a recently derived consistent equation for the internal memory variables of the involved memristors. In particular, we show that the number of independent memory…

As larger, higher-quality quantum devices are built and demonstrated in quantum information applications, such as quantum computation and quantum communication, the need for high-quality quantum memories to store quantum states becomes ever…