Related papers: Metrology of EUV Masks by EUV-Scatterometry and Fi…
We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results…
Extreme ultraviolet (EUV) scatterometry is an increasingly important metrology that can measure critical parameters of periodic nanostructured materials in a fast, accurate, and repeatable manner and with high sensitivity to nanoscale…
EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between…
A refined model of an extreme ultraviolet (EUV) mask stack consisting of the Mo/Si multilayer coated by a Ru protective layer and a TaBN/TaBO absorber layer was developed to facilitate accurate simulations of EUV mask performance for…
Ptychographic extreme ultraviolet (EUV) diffractive imaging has emerged as a promising candidate for the next-generation metrology solutions in the semiconductor industry, as it can image wafer samples in reflection geometry at the…
Microscopy with extreme ultraviolet (EUV) radiation holds promise for high-resolution imaging with excellent material contrast, due to the short wavelength and numerous element-specific absorption edges available in this spectral range. At…
Simulations of light scattering off an extreme ultraviolet lithography mask with a 2D-periodic absorber pattern are presented. In a detailed convergence study it is shown that accurate results can be attained for relatively large 3D…
Extreme ultraviolet (EUV) lithography is the cornerstone of the fabrication of advanced integrated circuits at the 7-nm node and beyond, but its reliance on multi-element reflective projection optics makes it inaccessible for small-scale…
Mask-based pattern generation is a crucial step in microchip production. The next-generation extreme-ultraviolet- (EUV) lithography instruments with a wavelength of \SI{13.5}{\nano\meter} is currently under development. In principle, this…
Dynamic scattering and imaging with coherent, ultrafast, extreme ultraviolet (EUV) light sources can resolve charge, phonon and spin processes on their intrinsic length and time scales. However, full field coherent diffraction imaging…
Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high-numerical aperture (high-NA)…
Increasing miniaturization and complexity of nanostructures require innovative metrology solutions with high throughput that can assess complex 3D structures in a non-destructive manner. EUV scatterometry is investigated for the…
A custom, flat field, extreme ultraviolet EUV spectrometer built specifically for use with low power light sources that operate under ultrahigh vacuum conditions is reported. The spectral range of the spectrometer extends from 4 nm to 40…
An extremely fast time-harmonic finite element solver developed for the transmission analysis of photonic crystals was applied to mask simulation problems. The applicability was proven by examining a set of typical problems and by a…
Extreme Ultraviolet (EUV) lithography is the newest technology that will be used in the semiconductor industry for printing circuitry in the sub-20 nm scale. Low-energy electrons (LEEs) produced upon illumination of resist materials with…
We demonstrate a new scheme of spectromicroscopy in the extreme ultraviolet (EUV) spectral range, where the spectral response of the sample at different wavelengths is imaged simultaneously. It is enabled by applying ptychographical…
The absence of efficient light modulators for extreme ultraviolet (EUV) and X-ray photons significantly limits their real-life application, particularly when even slight complexity of the beam patterns is required. Here we report on a novel…
Lamellar gratings are widely used diffractive optical elements; gratings etched into Si can be used as structural elements or prototypes of structural elements in integrated electronic circuits. For the control of the lithographic…
Table-top extreme ultraviolet (EUV) microscopy offers unique opportunities for label-free investigation of biological samples. Here, we demonstrate ptychographic EUV imaging of two dried, unstained model specimens: germlings of a fungus…
The concept of metasurfaces was recently applied to the extreme ultraviolet (EUV) spectral regime, providing a new opportunity for transmissive focusing elements in a regime where materials are highly lossy. The realization of metalenses in…