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Owing to its peculiar energy dispersion, the quantum capacitance property of graphene can be exploited in a two-dimensional layered capacitor configuration. Using graphene and boron nitride respectively as the electrodes and the insulating…
The observation that the thermal conductivity of single-crystalline silicon nanowires with diameter on the length scale of 25 nm is lower than that of bulk material by two orders of magnitude has attracted the interest onto silicon as a…
State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation…
Electron transport through Si-C bound alkyl chains, sandwiched between n-Si and Hg, is characterized by two distinct types of barriers, each dominating in a different voltage range. At low voltage, current depends strongly on temperature…
The coherent charge transport through an illuminated graphene ribbon is studied as function of electronic doping, frequency and strength of the electromagnetic driving, for monochromatic circularly polarized light. We focus on the DC…
Practical quantum computers require the construction of a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a…
Inserting molecular monolayers within metal / semiconductor interfaces provides one of the most powerful expressions of how minute chemical modifications can affect electronic devices. This topic also has direct importance for technology as…
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable,…
Silicon carbide has recently emerged as a promising photonics material due to its unique properties, including possessing strong second- and third-order nonlinear coefficients and hosting various color centers that can be utilized for a…
Spin-to-photon interfaces from defects in silicon hold great promise towards realizing quantum repeaters with the combination of advanced semiconductor and photonics technologies. Recently, controlled creation and erasure of simple carbon…
Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based…
Future quantum computing systems will require cryogenic integrated circuits to control and measure millions of qubits. In this paper, we report the design and characterization of a prototype cryogenic CMOS integrated circuit that has been…
Triangular cross-section color center photonics in silicon carbide is a leading candidate for scalable implementation of quantum hardware. Within this geometry, we model low-loss beam splitters for applications in key quantum optical…
We have performed parameter-free calculations of electron transport across a carbon molecular junction consisting of a C$_{60}$ molecule sandwiched between two semi-infinite metallic carbon nanotubes. It is shown that the Landauer…
The interoperability across multiple or many blockchains would play a critical role in the forthcoming blockchain-based data management paradigm. In particular, how to ensure the ACID properties of those transactions across an arbitrary…
In this chapter, silicon nanowires that are compatible with CMOS fabrication processes have been described. It has been shown that these nanowires can be functionalized by conjugating monoclonal antibodies to their surface in order to build…
Practical quantum networks require low-loss and noise-resilient optical interconnects as well as non-Gaussian resources for entanglement distillation and distributed quantum computation. The latter could be provided by superconducting…
Atomic cells made by anodically bonding silicon and borosilicate glasses are widely used in atomic devices. One inherent problem in these cells is that the silicon material blocks beams with wavelengths shorter than 1000 nm, which limits…
A complex quantum dot circuit based on a clean and suspended carbon nanotube embedded in a circuit quantum electrodynamique (cQED) architecture is a very attractive platform to investigate a large spectrum of physics phenomena ranging from…
Silicon-based integrated photonics has demonstrated significant advances in miniaturization and performance, yet critical challenges remain in achieving efficient on-chip communication at high bandwidths. Plasmonic devices on silicon and…