Related papers: Valley-Orbit Photocurrents in (111)-oriented Si-MO…
We propose and analyze a mechanism for inducing spin Hall currents in ordinary (1H phase) monolayer transition metal dichalcogenides (TMDs) due to the nonlinear process of optical rectification. The photo-induced spin current is…
The achievement of valley-polarized electron currents is a cornerstone for the realization of valleytronic devices. Here, we report on ballistic coherent transport experiments where two opposite quantum point contacts (QPCs) are defined by…
We examine the full static non-linear optical response of uniaxially strained transition metal dichalcogenide monolayers doped with a finite carrier density in the conduction band, in the presence of disorder. We find that the customary…
We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes almost 100% modulation of the Shubnikov de Haas oscillations…
We present a theory of an optically induced valley polarization in an interacting, time-reversal symmetric Weyl semimetal placed under strong magnetic fields. Because the application of a magnetic field reduces the symmetry of the crystal,…
The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the…
Valley, as a degree of freedom, has been exploited to realize valley-selective Hall transport and circular dichroism in two-dimensional layered materials. On the other hand, orbital angular momentum of light with helical phase distribution…
Liquid transport in microchip-based systems is important in many areas such as Laboratory-on-a-chip, Microfluidics and Optofluidics. Actuation of liquids in such systems is usually achieved using either mechanical displacement11 or via…
Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be achieved by electric field induced magnetic anisotropy (MA)…
We study a system composed of graphene decorated with an array of islands with C_3v symmetry that induce quantum dot (IQD) regions via proximity effects and give rise to several spin-orbit couplings (SOCs). We evaluate transport properties…
The electron-photon interaction in 2D materials obeys the rule of electron valley-photon polarization correspondence. At the quantum level, such correspondence can be utilized to entangle valleys and polarizations and attain the transfer of…
Interstitial magnesium acts as a moderately deep double donor in silicon, and is relatively easily introduced by diffusion. Unlike the case of the chalcogen double donors, the binding energies of the even-parity valley-orbit excited states…
We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution…
The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…
Photo-induced charge transfer of positive and negative charges across the interface between an ordered organic semiconductor and a polymeric insulator is observed in the field-effect experiments. Immobilization of the transferred charge in…
Efficient electric manipulation of valley degrees of freedom is critical and challenging for the advancement of valley-based information science and technology. We put forth an electrical scheme, based on a two-band Dirac model, that can…
We report on the observation of magnetic quantum ratchet effect in metal-oxide-semiconductor field-effect-transistors on silicon surface (Si-MOSFETs). We show that the excitation of an unbiased transistor by ac electric field of terahertz…
A new class of photocurrents is predicted to occur in both type-I and type-II Weyl semimetals. Unlike the previously studied photocurrents in chiral materials, the proposed current requires neither circularly polarized light, nor an absence…
The circular photon drag effect is observed in a bulk semiconductor. The photocurrent caused by a transfer of both translational and angular momenta of light to charge carriers is detected in tellurium in the mid-infrared frequency range.…