Related papers: Valley-Orbit Photocurrents in (111)-oriented Si-MO…
The theoretical results are presented showing that strain-induced anisotropy of graphene spectrum gives rise to the valley currents under the illumination by normally incident light. The currents of the two graphene valleys are mutually…
A monolayer of $MoS_{2}$ has a non-centrosymmetric crystal structure, with spin polarized bands. It is a two valley semiconductor with direct gap falling in the visible range of the electromagnetic spectrum. Its optical properties are of…
The ability to tune the Fermi level of semiconductors is at the heart of modern electronics. Here, we demonstrate that persistent photoconductivity (PPC) enables tuning of carrier density, conductivity type, and, consequently, the valley…
Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices.…
We study ballistic transport of Dirac electrons through a strip in silicene, when the strip is exposed to off-resonant circularly polarized light and an electric field applied perpendicular to the silicene plane. We show that the…
We draw attention to the past literature on valley phase transition in Si(100) MOSFETs. The recent experiments performed by Kravchenko and co-workers indicating metal-insulator transition in Si MOSFETs are also in accord with the valley…
Recent experiments have revealed that novel nonequilibrium states consistent with the hydrodynamic description of electrons are realized in ultrapure graphene, which hosts the valley degrees of freedom. Here, we formulate a theory of…
In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…
Modern electronic devices heavily rely on the accurate control of charge and spin of electrons. The emergence of controllable valley degree of freedom brings new possibilities and presents a promising prospect towards valleytronics.…
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field…
We report on the observation of the circular (helicity-dependent) and linear photogalvanic effects in Si-MOSFETs with inversion channels. The developed microscopic theory demonstrates that the circular photogalvanic effect in Si structures…
We investigate two-photon transitions to the electron-hole scattering continuum in monolayer transition-metal dichalcogenides, and identify two contributions to this nonlinear optical process with opposite circularly polarized valley…
It is demonstrated that the non-instantaneous response of the optically induced coherent polarization tremendously influences the real-space shift of electronic charges in semiconductors. The possibility to coherently control this…
We examine electron transport through semiconductor quantum dot subject to a continuous circularly polarized optical irradiation resonant to the electron - heavy hole transition. Electrons having certain spin polarization experience Rabi…
We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the…
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling…
The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…
Transconductance is a central figure of merit in field-effect transistors, typically governed by charge accumulation and carrier mobility. In multilayer WSe$_2$ transistors, however, it is shown to carry a nonlinear transport signature of…
We test the valley-filtering capabilities of a quantum dot inscribed by locally straining an $\alpha$-$\mathcal{T}_3$ lattice. Specifically, we consider an out-of-plane Gaussian bump in the center of a four-terminal configuration and…
The effect of polarization rotation on the performance of metal oxide semiconductor field-effect transistors was investigated with a Landau-Ginzburg-Devonshire theory based model. In this analytical model, depolarization field, polarization…