Related papers: Single-charge escape processes through a hybrid tu…
It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either $SISIS$ or $NISIN$ type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of…
We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize the equilibrium state of a single electron trapped in the…
It is shown that in a structure consisting of a superconducting ring-shaped electrode overlapped by a normal metal contact through a thin oxide barrier, measurements of the tunnel current in magnetic field can probe persistent currents in…
We report on measurements on a sample consisting of two nominally identical single-electron transistors the islands of which are coupled capacitively. One transistor at a time is operated as electron box. The remaining transistor is used as…
We present studies of the atomic limit of the extended Hubbard model with pair hopping for arbitrary electron density and arbitrary chemical potential. The Hamiltonian consists of (i) the effective on-site interaction $U$ and (ii) the…
We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface -- effectively a two-level system. Theoretical estimates show that the tunneling should be highly…
We studied theoretically the behavior of an injected electron-hole pair in crystalline polyethylene. Time-dependent adiabatic evolution by ab-initio molecular dynamics simulations show that the pair will become self-trapped in the perfect…
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by…
Using the nonequilibrium theory of superconductivity with the tunnel Hamiltonian, we consider a mesoscopic NISINISIN heterostructure, i.e., a structure consisting of five intermittent normal-metal (N) and superconducting (S) regions…
We propose a phenomenological description of electronic transport through a normal metal/superconductor interface of arbitrary transparency, which accounts for the presence of electron-electron interaction in the normal metal. The effect of…
The device of electric double-layer transistor (EDLT) with ionic liquid has been employed as an effective way to dope carriers over a wide range, which can induce metallic state, magnetic reconstruction and superconducting transition.…
We examine the internal structure of the heavy fermion condensate, showing that it necessarily involves a d-wave pair of quasiparticles on neighboring lattice sites, condensed in tandem with a composite pair of electrons bound to a local…
We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
We demonstrate a new mechanical transduction platform for individual spin qubits. In our approach, single micro-magnets are trapped using a type-II superconductor in proximity of spin qubits, enabling direct magnetic coupling between the…
We study magneto-electric properties of single electron traps in metal-oxide-semiconductor field effect transistors. Using a microscopic description of the system based on the single-site Anderson-Holstein model, we derive an effective low…
Under the conditions of superfluid-Mott-insulator criticality in two dimensions, the trapping centers--i.e., local potential wells and bumps--are generically characterized by an integer charge corresponding to the number of trapped…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
We report measurements of the temperature and pressure dependence of the electrical resistivity of single crystalline iron-based chalcogenide Cs0.8Fe2Se2. In this material superconductivity Tc~30K develops from a normal state with extremely…
We theoretically study electronic transport through a layer of quantum dots connecting two metallic leads. By the inclusion of an inductor in series with the junction, we show that steady electronic transport in such a system may be…