Related papers: An integrated capacitance bridge for high-resoluti…
We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device.…
Graphene nanostructures exhibit an intrinsic advantage in relation to the gate delay in three-terminal devices and provide additional benefits when operate in the quantum capacitance limit. In this paper, we developed a simple model that…
We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a…
In this paper, we propose the Wheatstone bridge configuration for enabling real-time and closed-loop stabilization and calibration of photonic devices integrated on chip. The measurement of the optical power propagating in a waveguide is…
We study a hybrid device defined in an InAs nanowire with an epitaxial Al shell that consists of a quantum dot in contact with a superconducting island. The device is electrically floating, prohibiting transport measurements, but providing…
Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling capacitaces…
Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation…
The cuprate Hg0.8Tl0.2Ba2Ca2Cu3O8.33 exhibits the highest superconducting transition temperature Tc of 138K. Achieving superconductivity at even higher temperatures, up to room temperature, represents the ultimate dream of humanity. As…
Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this…
In this study, we investigated the graphene-ionic liquid (EMImBF4) interface to clarify the effects of ambient temperature and potential on the differential capacitance. We complemented molecular dynamics simulations with density functional…
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF…
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As…
In this study, we present the design and analysis of a Low Noise Amplifier tailored specifically for quantum applications. We selected the HEMT for its unique noise reduction properties, crucial for quantum engineering. The main goal is to…
The Wheatstone bridge experiment is fundamental for precise measurement of electrical resistance, holding significant value in both undergraduate physics education and real-life scientific research. This study reimagines the experiment by…
We present the results of an industry-grade fabrication of superconducting qubits on 200 mm wafers utilizing CMOS-established processing methods. By automated waferprober resistance measurements at room temperature, we demonstrate a…
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K.…
Quantum metrology has been shown to surpass classical limits of correlation, resolution, and sensitivity. It has been introduced to interferometric Radar schemes, with intriguing preliminary results. Even quantum-inspired detection of…
Various applications of quantum devices call for an accurate calibration of cryogenic amplification chains. To this end, we present a convenient calibration scheme and use it to accurately measure the total gain and noise temperature of an…
This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabrication and characterization of graphene quantum Hall effect…
An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using…