Related papers: Sub-Volt Silicon-Organic Electrooptic Modulator
A fundamental road block for all-optical information processing is the difficulty in realizing a silicon optical transistor with the ability to provide optical gain, input output isolation and buffer action. In this work, we demonstrate an…
Recent experiments showed that unity-order index change in a transparent conducting oxide (TCO) can be achieved in a metal-oxide-semiconductor (MOS) structure by accumulation charge. However, the ultrathin (~5nm) accumulation layer and…
We demonstrate a low-loss integrated electro-optic Mach-Zehnder modulator in thin-film lithium tantalate at 737 nm, featuring a low half-wave voltage-length product of 0.65 V$\cdot$cm, an extinction ratio of 30 dB, low optical loss of 5.3…
In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on…
Broadband integrated thin-film lithium niobate (TFLN) electro-optic modulators (EOM) are desirable for optical communications and signal processing in both the O-band (1310 nm) and C-band (1550 nm). To address these needs, we design and…
Silicon nitride (SiN) is currently the most prominent platform for photonics at visible and near-IR wavelength bandwidth. However, realizing fast electro-optic (EO) modulators, the key components of any integrated optics platform, remains…
We propose several planar layouts of ultra-compact plasmonic waveguide modulators that utilize alternative CMOS-compatible materials. The modulation is efficiently achieved by tuning the carrier concentration in a transparent conducting…
The capability to modulate the intensity of an optical beam has scientific and practical significance. In this work, we demonstrate Y-Z cut lithium niobate acousto-optic modulators with record-high modulation efficiency, requiring only…
The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can…
Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…
We demonstrate a platform for phase and amplitude modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators. The platform, fabricated in a CMOS…
As a crucial element for various applications, including optical communications and analog photonic links, electro-optic modulators have a small size, low voltage, and wide bandwidth. Electro-optic modulators based on the thin-film lithium…
The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform…
We present a design for a superconducting, on-chip circulator composed of dynamically modulated transfer switches and delays. Design goals are set for the multiplexed readout of superconducting qubits. Simulations of the device show that it…
In this work, we design, fabricate and characterize a compact, broadband and highly sensitive integrated photonic electromagnetic field sensor based on a silicon-organic hybrid modulator driven by a bowtie antenna. The large electro-optic…
Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such…
Optical isolators, while commonplace in bulk- and fiber-optic systems, remain a key missing component in integrated photonic systems. Isolation using magneto-optic effects has been difficult to implement due to fabrication restraints,…
Managing insertion losses, polarizations and device footprint is crucial in developing large-scale photonic integrated circuits (PICs). This paper presents a solution to these critical challenges by designing a semiconductor optical…
Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small footprint with low operating voltage and hence low power dissipation, thus lending themselves to on-chip integration of large-scale device arrays. Here we demonstrate…
In this paper, we quantitatively analyzed the trade-off between energy per bit for switching and modulation bandwidth of classical electro-optic modulators. A formally simple energy-bandwidth limit (Eq. 10) is derived for electro-optic…