Related papers: Anisotropic charge transport in non-polar GaN QW: …
Introducing quasiparticle anisotropy in graphene via uniaxial strain has a profound effect on the polarization charge density induced by external impurities, both Coulomb and short-range. In particular, the charge distribution induced by a…
The anisotropic electron transport in the (001) plane of sublimation-grown Cl$_{2}$-NDI (naphthalene diimide) single crystals is analysed over a temperature range between 175 K and 300 K. Upon cooling from room temperature to 175 K the…
Photoluminescence measurements on high-quality InGaN quantum wells reveal that carriers diffuse laterally to long distances at room temperature, up to tens of microns. This behavior, which shows a pronounced dependence on the excitation…
We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their…
We report on study of electrical and structural properties of InSb/GaAs(001) heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong anisotropy of electron transport parameters measured at a low magnetic field has…
Electron transport in nonideal quantum wells (QW) with large-scale variations of energy levels is studied when two subbands are occupied. Although the mean fluctuations of these two levels are screened by the in-plane redistribution of…
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…
The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires…
We analyze the electronic transport through a model spin-1 molecule as a function of temperature, magnetic field and bias voltage. We consider the effect of magnetic anisotropy, which can be generated experimentally by stretching the…
Manipulation of surface architecture of semiconducting nanowires with a control in surface polarity is one of the important objectives for nanowire based electronic and optoelectronic devices for commercialization. We report the growth of…
Prototypes for hot-carrier solar cells based on type-II InAs/AlAsSb multiple quantum wells are examined for AC photoconductivity as a function of lattice temperature and photoexcitation energy to determine the photoexcited charge carrier…
We investigate the anisotropies in the gravitational wave (GW) background produced at preheating after inflation. Using lattice field theory simulations of a massless preheating model, we show that the GW amplitude depends sensitively on…
We investigate electrical charge transport in hot magnetized plasma using first-principles quantum field theoretical methods. By employing Kubo's linear response theory, we express the electrical conductivity tensor in terms of the fermion…
We have investigated the effect on phonon energy transport in mesoscopic systems and the reduction in the thermal conductance in the quantum limit due to phonon scattering by surface roughness using full 3-dimensional elasticity theory for…
Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…
The intrinsic charge transport of stanene is investigated by using density function theory and density function perturbation theory coupled with Boltzmann transport equations from first principles. The accurate Wannier interpolations are…
Recent techniques have allowed transition metal dichalcogenides (TMD) monolayers to be grown and adequately characterised. Of particular interest, their nonlinear optical response presents many promising opportunities for future…
The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via epitaxial matching to II-IV nitride materials that have…
There is an ongoing debate about the origin and even the very existence of a high degree of linear polarization of some chromospheric spectral lines observed in solar flares. The standard explanation of these measurements is in terms of the…
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…