Related papers: Graphene field effect transistors with ferroelectr…
The extraordinary electronic properties of graphene, such as its continuously gate-variable ambipolar field effect and the resulting steep change in resistivity, provided the main thrusts for the rapid advance of graphene electronics. The…
Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for an arbitrary drain-to-source voltage provided that the…
Ultrafast electron dynamics in solids under strong optical fields has recently found particular attention. In dielectrics and semiconductors, various light-field-driven effects have been explored, such as high-harmonic generation,…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional…
In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate…
Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…
A colossal magnetoresistance ($\sim 100\times10^3\%$) and an extremely large magnetoresistance ($\sim 1\times10^6\%$) have been previously explored in manganite perovskites and Dirac materials, respectively. However, the requirement of an…
We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron…
We study the effects of electrostatic gating on the current-induced phenomena in ultrathin ferromagnet/heavy metal heterostructures. We utilize heterodyne detection and analysis of symmetry with respect to the direction of the magnetic…
We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs.…
Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high velocity and mobility of carriers in graphene can open way for ultra-fast group IV transistors with…
In view of the many quantum field theoretical descriptions of graphene in $2+1$ dimensions, we present another field theoretical feature of graphene, in the presence of defects. Particularly, we shall be interested in gapped graphene in the…
Rhombohedral (ABC-stacked) multilayer graphene hosts interaction-driven phases enabled by surface flat bands at large displacement fields. In thick flakes, however, strong screening suppresses internal electric fields, raising the question…
Magnetism in graphene is an emerging field that has received much theoretical attention. In particular, there have been exciting predictions for induced magnetism through proximity to a ferromagnetic insulator as well as through localized…
We theoretically investigate effect of a transverse electric field generated by side gates and a vertical electric field generated by top, back gates on energy bands and transport properties of zigzag bilayer graphene ribbons (Bernal…
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…
Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the…
The gate-controllable complex conductivity of graphene offers unprecedented opportunities for reconfigurable plasmonics at THz and mid-IR frequencies. However, the requirement of a gating electrode close to graphene and the single `control…
We have developed the combination of an etching and deposition technique that enables the fabrication of locally gated graphene nanostructures of arbitrary design. Employing this method, we have fabricated graphene nanoconstrictions with…