Related papers: Germanium electrostatic quantum dot with integrate…
We present \textbf{GeQuLEP} (Germanium-based Quantum Sensors for Low-Energy Physics), a conceptual design for an advanced quantum sensing platform integrating high-purity germanium (Ge) crystals with engineered phononic crystal cavities. At…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as…
We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that…
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe…
Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is a promising system as very sharp and well defined one dimensional contacts can be created between a metal and a semiconductor, that can become a quantum dot if the…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown.…
Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…
Low capacitance, large volume, high purity germanium (HPGe) radiation detectors have been successfully employed in low-background physics experiments. However, some physical processes may not be detectable with existing detectors whose…
Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…
We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a…
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the…
Germanium (Ge) detectors with ability of measuring a single electron-hole (e-h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…