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Many printed electronic applications require strain-independent electrical properties to ensure deformation-independent performance. Thus, developing printed, flexible devices using 2D and other nanomaterials will require an understanding…
While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an…
This paper introduces a novel simulation tool for analyzing and training neural network models tailored for compute-in-memory hardware. The tool leverages physics-based device models to enable the design of neural network models and their…
The low thermal conductivity of silicon nanostructures, with respect to bulk silicon, opens excellent possibilities for thermoelectric applications because it will enable the use of silicon for the high efficient direct conversion of wasted…
A front-end readout electronics system has been developed for silicon strip detectors. The system uses an application specific integrated circuit (ASIC) ATHED to realize multi-channel E&T measurement. The slow control of ASIC chips is…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…
In this paper, we present the unique features exhibited by modified asymmetrical Double Gate (DG) silicon on insulator (SOI) MOSFET. The proposed structure is similar to that of the asymmetrical DG SOI MOSFET with the exception that the…
Using molecular dynamics (MD) simulation, we investigate the mechanical response of silicon to high dose ion-irradiation. We employ a realistic and efficient model to directly simulate ion beam induced amorphization. Structural properties…
All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memory structure. Here we investigate the key current-limiting…
Analog computing is attractive compared to digital computing due to its potential for achieving higher computational density and higher energy efficiency. However, unlike digital circuits, conventional analog computing circuits cannot be…
Recent advances in power system simulation have included the use of complex rectangular current and voltage (I-V) variables for solving the power flow and three-phase power flow problems. This formulation has demonstrated superior…
Compact modeling of MOSFETs from a 0.35 micron SOI technology node operating at 4 K is presented. The Verilog-A language is used to modify device equations for BSIM models and more accurately reproduce measured DC behavior, which is not…
Moir\'e fringes are used throughout a wide variety of applications in physics and engineering to bring out small variations in an underlying lattice by comparing with another reference lattice. This method was recently demonstrated in…
High-k (115), crystalline SrTiO3 (STO) thin film was transferred on GaN for potential applications in power devices (transistor and diodes) by nanomembrane transfer method and the detailed electrical properties such as leakage current, CV…
An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The quantum mechanical features of the electron transport are…
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…
In this work we will introduce the A-V-A formulation based iterative algorithm method (IAM) for simulating the magnetization current of high temperature superconductors. This new method embedded in ANSYS can simulate the critical state…
Silicon presents itself as a high-capacity anode material for lithium-ion batteries with a promising future. The high ability for lithiation comes along with massive volume changes and a problematic voltage hysteresis, causing reduced…
Silicon (Si) anodes attract a lot of research attention for their potential to enable high energy density lithium-ion batteries (LIBs). Many studies focus on nanostructured Si anodes to counteract deterioration. In this work, we model LIBs…
The scattering effects are studied in nanometer-scaled double-gate MOSFET, using Monte Carlo simulation. The non-equilibrium transport in the channel is analyzed with the help of the spectroscopy of the number of scatterings experienced by…