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Understanding the interactions between strain, interfacial mechanics, and electrical performance is critical for designing beyond silicon electronics based on hetero-integrated 2D materials. Through combined experiment and simulation, we…
We propose to operate a superconducting transition edge sensor (TES) using a different type of biasing, in which the resistance of the TES is kept constant by means of feedback on the bias voltage and is independent of the incoming signal…
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire…
We propose a direct experimental extraction technique for trapped charges and quantitative energy band diagrams in the FeFETs with metal-insulator-ferroelectric-insulator-semiconductor (MIFIS) structure, derived from the physical…
Dissipative cat-qubits are a promising architecture for quantum processors due to their built-in quantum error correction. By leveraging two-photon stabilization, they achieve an exponentially suppressed bit-flip error rate as the distance…
$\beta$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits. A novel approach towards attaining a high…
We demonstrate phase-matched second-harmonic generation (SHG) from three-dimensional metamaterials consisting of stacked metasurfaces. To achieve phase matching, we utilize a novel mechanism based on phase engineering of the metasurfaces at…
Recent years have witnessed increasing interest in machine learning inferences on serverless computing for its auto-scaling and cost effective properties. Existing serverless computing, however, lacks effective job scheduling methods to…
A novel planar device having doped silicon regions (tubs) under the source and drain of an FDSOI MOSFET is reported at 20 nm gate length. The doped silicon regions result in formation of potential wells (PW) in the source and drain regions…
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
A high accuracy and high sensitivity system architecture is proposed for the read-out circuit of electrical impedance tomography system-on-chip. The switched ratiometric technique is applied in the proposed architecture. The proposed system…
We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser…
This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…
The advanced complex electronic systems increasingly demand safer and more secure hardware parts. Correspondingly, fault injection became a major verification milestone for both safety- and security-critical applications. However, fault…
Prolonged blackouts in distribution systems (DSs) with high penetration of distributed energy resources (DERs) necessitate novel restoration strategies to rapidly restore loads. However, the resulting complex optimization problem…
On-device machine learning (ODML) enables intelligent applications on resource-constrained devices. However, power consumption poses a major challenge, forcing a trade-off between model accuracy and power efficiency that often limits model…
In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model…
Power transistors such as IGBTs and MOSFETs are a source of electromagnetic interference (EMI) during switching due to rapid voltage/current variations. Increasing the switching time can reduce the generation of EMI but increases losses.…
Power dissipation in integrated circuits is one of the major concerns to the research community, at the verge when more number of transistors are integrated on a single chip. The substantial source of power dissipation in sequential…