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A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
Mechanism of transient population inversion in graphene with multi-splitted (interdigitated) top-gate and grounded back gate is suggested and examined for the mid-infrared (mid-IR) spectral region. Efficient stimulated emission after fast…
In contemporary general-purpose graphics processing units (GPGPUs), the continued increase in raw arithmetic throughput is constrained by the capabilities of the register file (single-cycle) and last-level cache (high bandwidth), which…
The LHC upgrade scheduled for 2018 is expected to significantly increase the accelerator's luminosity, and as a result the radiation background rates in the ATLAS Muon Spectrometer will increase too. Some of its components will have to be…
Gate-induced modulation of the spin-orbit interaction (SOI) in a 1.5 nm-thick Pd thin film grown on a ferrimagnetic insulator was investigated. Efficient charge accumulation by ionic gating enables a substantial upshift in the Fermi level…
We demonstrate a gate dielectric engineering approach leveraging an ultrathin, atomic layer deposited (ALD) silicon oxide interfacial layer (SiL) between the amorphous oxide semiconductor (AOS) channel and the high-k gate dielectric. SiL…
Resource constraints in smart devices demand an efficient cryptosystem that allows for low power and memory consumption. This has led to popularity of comparatively efficient Elliptic curve cryptog-raphy (ECC). Prior to this paper, much of…
Electrically induced ionic motion offers a new way to realize voltage-controlled magnetism, opening the door to a new generation of logic, sensor, and data storage technologies. Here, we demonstrate an effective approach to…
Echoed conditional displacement (ECD) gates for bosonic systems have become the key element for real-time quantum error correction beyond the break-even point. These gates are characterized by a single complex parameter $\beta$, and can be…
Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
A proposal for a phase gate and a M{\o}lmer-S{\o}rensen (MS) gate in the dressed state basis is presented. In order to perform the multi-qubit interaction, a strong magnetic field gradient is required to couple the phonon-bus to the qubit…
Embedded Field-Programmable Gate Arrays (eFPGAs) allow for the design of hardware accelerators of edge Machine Learning (ML) applications at a lower power budget compared with traditional FPGA platforms. However, the limited eFPGA logic and…
We present the concept of a new type of silicon tracking sensor called Enhanced Lateral Drift (ELAD) sensor. In ELAD sensors the spatial resolution of the impact position of ionising particles is improved by a dedicated charge sharing…
Dual-material double-gate tunnel field effect transistor (DMDG TFET) is a promising candidate for low-power, high-speed electronics due to enhanced electrostatic control and superior switching characteristics. Integrating a pocket region…
We study gradient compression methods to alleviate the communication bottleneck in data-parallel distributed optimization. Despite the significant attention received, current compression schemes either do not scale well or fail to achieve…
The nature of a metal--insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions at integer bulk filling, as reported in recent experiments of Roddaro et al. [1], is addressed. We are particularly…
We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new…
Transformers are gaining increasing attention across Natural Language Processing (NLP) application domains due to their outstanding accuracy. However, these data-intensive models add significant performance demands to the existing computing…
Many modern video processing pipelines rely on edge-aware (EA) filtering methods. However, recent high-quality methods are challenging to run in real-time on embedded hardware due to their computational load. To this end, we propose an…