Related papers: Leakage Current Reduction Techniques in Poly-Si TF…
Continuous gate sets are a key ingredient for near-term quantum algorithms. Here, we demonstrate a hardware-efficient, continuous set of controlled arbitrary-phase ($\mathrm{C}Z_{\theta}$) gates acting on flux-tunable transmon qubits. This…
The sheet current model underlying the software 3D-MLSI package for calculation of inductances of multilayer superconducting circuits, has been further elaborated. The developed approach permits to overcome serious limitations on the shape…
VSG control has emerged as a crucial technology for integrating renewable energy sources. However, renewable energy have limited tolerance to overcurrent, necessitating the implementation of current limiting (CL)strategies to mitigate the…
A fundamental challenge in quantum computing is to increase the number of operations within the qubit coherence time. While this can be achieved by decreasing the gate duration, the use of shorter signals increases their bandwidth and can…
The liquid xenon (LXe) time projection chamber (TPC) technology is probing a wide range of dark matter masses from sub-GeV to a few TeV. To further improve its sensitivity to sub-GeV dark matter and its application in reactor neutrino…
Millimeter-wave networks have already been successfully rolled out in many countries and now the research direction heads toward new technologies and standards to enable Tbps rates for future sixth-generation (6G) wireless communication…
The Advanced Photon Source is in the process of up-grading its storage ring from a double-bend to a multi-bend lattice as part of the APS Upgrade Project (APS-U). A swap-out injection scheme is planned for the APS-U to keep a constant beam…
A key factor preventing the market penetration of renewable, intermittent energy sources, such as solar, wind and wave, is the lack of cost-effective energy storage options to counteract intermittency. Here, we propose and demonstrate a…
We develop an analytical device model for graphene bilayer field-effect transistors (GBL-FETs) with the back and top gates. The model is based on the Boltzmann equation for the electron transport and the Poisson equation in the weak…
Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency…
Conventional relays encounter difficulties in protecting transmission lines (TLs) connected to converter-based energy sources (CBESs) due to the influence of power electronics on fault characteristics. This article proposes a single-ended…
Strain is commonly used in metal-oxide-semiconductor technologies to boost on-state performance. This booster has been in production for at least a decade. Despite this, a systematic study of the impact of strain on off-state leakage…
Logic circuits consist of devices that can be controlled between two distinct states. The recent demonstration that a superconducting current flowing in a constriction can be controlled via a gate voltage ($V_G$) - can lead to…
This paper summarizes the idea of Tiered-Latency DRAM, which was published in HPCA 2013. The key goal of TL-DRAM is to provide low DRAM latency at low cost, a critical problem in modern memory systems. To this end, TL-DRAM introduces…
The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid gated field-effect transistors are often fragile…
The emergence of second generation (2G) high-temperature superconductor (HTS) tapes has favored the development of HTS magnets for their applications in areas such as NMR, MRI and high field magnets. The screening current-induced field and…
Flash memory based on floating gate transistor is the most widely used memory technology in modern microelectronic applications. We recently proposed a new concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT) based…
We investigate energy-leaky modes induced by incomplete measurements of the scattering matrices of complex media. Due to the limited numerical apertures of an optical system, it is experimentally challenging to access theoretically…
Fully depleted (FD) Silicon on Insulator (SOI) metal oxide Field Effect Transistor (MOSFET) Is the Leading Contender for Sun 65nm Regime. This paper presents a study of effects of work functions of metal gate on the performance of FD-SOI…
In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the…