Related papers: Leakage Current Reduction Techniques in Poly-Si TF…
A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel…
For nanoscale CMOS applications, strained-silicon devices have been receiving considerable attention owing to their potential for achieving higher performance and compatibility with conventional silicon processing. In this work, an…
In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population,…
Many realizations of solid-state qubits involve couplings to leakage states lying outside the computational subspace, posing a threat to high-fidelity quantum gate operations. Mitigating leakage errors is especially challenging when the…
High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with…
Leakage errors, in which a qubit is excited to a level outside the qubit subspace, represent a significant obstacle in the development of robust quantum computers. We present a computationally efficient simulation methodology for studying…
1T1R (1-transistor-1-resistor) memory crossbar arrays represent a promising solution for compute-in-memory matrix-vector multiplication accelerators and embedded or storage-class memory. However, the size and scaling of these arrays are…
Thermoelectric effects are envisioned to reduce programming currents in nanopillar phase change memory cells. However, due to the inherent symmetry in such a structure, the contribution due to thermoelectric effects on programming currents…
We introduce an innovative graphene-based architecture to control electronic current flows. The tunable dot platform (TDP) consists of an array of gated dots, with independently adjustable potentials, embedded in graphene. Inspired by Mie…
In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-to-band-tunneling (BTBT) leakage, results in the large increase of total leakage power in a logic circuit. Leakage…
A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…
Qubits based on the magnetic flux degree of freedom require a flux bias, whose stability and precision strongly affect the qubit performance, up to a point of forbidding the qubit operation. Moreover, in the perspective of multiqubit…
Quantum computers require high fidelity quantum gates. These gates are obtained by routine calibration tasks that eat into the availability of cloud-based devices. Restless circuit execution speeds-up characterization and calibration by…
Leakage out from the qubit subspace compromises standard quantum error correction protocols and is a challenge for practical quantum computing. We propose a passive leakage removal unit based on an array of coupled disordered transmons and…
In this paper, we present the unique features exhibited by modified asymmetrical Double Gate (DG) silicon on insulator (SOI) MOSFET. The proposed structure is similar to that of the asymmetrical DG SOI MOSFET with the exception that the…
We propose a realization of a transformation-based acoustic temporal cloak using an active closed-loop control approach to an equivalent electromagnetic problem. Unlike the more common spatial cloaks the goal of which is hiding fixed…
Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a…
Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from…
In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…
Transparent oxide semiconductors (TOSs) based thin-film transistors (TFTs) that exhibit higher field effect mobility (uFE) are highly required toward the realization of next-generation displays. Among numerous types of TOS-TFTs, In2O3-based…