Related papers: Leakage Current Reduction Techniques in Poly-Si TF…
A nematic liquid crystal (NLC) layer with the anisotropy axis modulated at a fixed rate q in the transverse direction is considered. If the layer locally constitutes a half-wave plate, then the thin-screen approximation predicts 100%…
In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of…
For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used to maximize the amount of charge that can be induced and…
The occurrence of voltage violations are a major deterrent for absorbing more roof-top solar power to smart Low Voltage Distribution Grids (LVDG). Recent studies have focused on decentralized control methods to solve this problem due to the…
Liquid jet impingement cooling is an efficient cooling technique where the liquid coolant is directly ejected from nozzles on the chip backside resulting in a high cooling efficiency due to the absence of the TIM and the lateral temperature…
This paper proposes an active radio frequency (RF) cancellation solution to suppress the transmitter (TX) passband leakage signal in radio transceivers supporting simultaneous transmission and reception. The proposed technique is based on…
As we move beyond the era of transistor miniaturization, back-end-of-line-compatible transistors that can be stacked monolithically in the third dimension promise improved performance for low-power electronics. In advanced transistor…
In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…
Analysis of lithiation and delithiation kinetics in pulse-laser-deposited crystalline thin-film silicon (Si) electrodes is presented. Data from open-circuit relaxation experiments are used in conjunction with a model based on Tafel kinetics…
Side-channel attacks exploit variations in non-functional behaviors to expose sensitive information across security boundaries. Existing methods leverage side-channels based on power consumption, electromagnetic radiation, silicon substrate…
3-D cross point phase change memory (PCM) is a promising emerging memory. However, dynamic performances of 3-D cross point PCM are limited and the role of bias scheme is unknown. Previous studies on bias schemes for planar memories use…
Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore de-ionized (DI) water as a solution top gate for…
Various side-channel attacks (SCAs) on ICs have been successfully demonstrated and also mitigated to some degree. In the context of 3D ICs, however, prior art has mainly focused on efficient implementations of classical SCA countermeasures.…
One of the notorious problems of frequency modulated continuous-wave (FMCW) radar is leakage between the transmitter and the receiver. The phase noise of the leakage is expressed as a skirt around the leakage signal on power spectrum. It…
Leakage errors occur when a quantum system leaves the two-level qubit subspace. Reducing these errors is critically important for quantum error correction to be viable. To quantify leakage errors, we use randomized benchmarking in…
We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations…
We present transport measurements of electrons on the surface of liquid helium in a microchannel device in which a constriction may be formed by a split-gate electrode. The surface electron current passing through the microchannel first…
Use of 2G HTS coated conductors in several power applications has become popular in recent years. Their large current density under high magnetic fields makes them suitable candidates for high power capacity applications such as stacks,…
This paper presents OptGM, an optimized gate merging method designed to mitigate negative bias temperature instability (NBTI) in digital circuits. First, the proposed approach effectively identifies NBTI-critical internal nodes, defined as…
In recent years, a lot of scientific research effort has been put forth for the investigation of Transition Metal Dichalcogenides (TMDC) and other Two Dimensional (2D) materials like Graphene, Boron Nitride. Theoretical investigation on the…