Related papers: Electron spin decoherence in isotope-enriched sili…
The main source of decoherence for an electron spin confined to a quantum dot is the hyperfine interaction with nuclear spins. To analyze this process theoretically we diagonalize the central spin Hamiltonian in the high magnetic B-field…
Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point…
Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission…
A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or…
Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating…
Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon, since quantum computation can be realized through the manipulation of electron and/or nuclear spins. We here report on…
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3x10^17 cm^3 and O to a concentration of 10^20 cm^3, the…
Decoherence of a shallow donor electron spin in silicon caused by electron-lattice interaction is studied. We find that there are two time scales associated with the evolution of the electron spin density matrix: the fast but incomplete…
Molecular spins offer promise in emerging quantum technologies such as quantum sensing and computing. At low temperatures, nuclear spin-spin interactions affect electron spin coherence lifetimes through pure dephasing. Nuclear-spin noise…
Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. We show, through bias control of an isotopically…
Electron spin states of solid-state defects such as Nitrogen- and Silicon-vacancy {\em color centers} in diamond are a leading quantum-memory candidate for quantum communications and computing. Via open-quantum-systems modeling of…
We discuss a general framework to address spin decoherence resulting from fluctuations in a spin Hamiltonian. We performed a systematic study on spin decoherence in the compound K$_6$[V$_{15}$As$_6$O$_{42}$(D$_2$O)] $\cdot$ 8D$_2$O, using…
Spins in the `semiconductor vacuum' of silicon-28 ($^{28}$Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of $^{28}$Si is required to limit the decoherence pathway caused by magnetic…
Phosphorus donor spin coherence in isotopically pure 28 silicon is measured at very low temperatures using pulsed electron spin resonance. The isolated spin T2 varies unexpectedly with phosphorus concentration
We investigate decoherence due to pure dephasing of a localized spin qubit interacting with a nuclear spin bath. Although in the limit of a very large magnetic field the only decoherence mechanism is spectral diffusion due to dipolar…
Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this…
Molecular spin qubits are promising candidates for quantum technologies, but their performance is limited by decoherence arising from diverse mechanisms. The complexity of the environment makes it challenging to identify the main source of…
We analytically solve the {\it Non-Markovian} single electron spin dynamics due to hyperfine interaction with surrounding nuclei in a quantum dot. We use the equation-of-motion method assisted with a large field expansion, and find that…
We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as…
Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear…