Related papers: Intrinsic and dopant enhanced solid phase epitaxy …
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
We consider in our work high quality single crystal thin films of Bi2Se3, grown by molecular beam epitaxy, both with and without Pb doping. Our ARPES data demonstrate topological surface states with a Fermi level lying inside the bulk band…
High germanium content silicon germanium (SiGe) epitaxy is critical for strain engineering in advanced gate all around (GAA) transistors. This paper demonstrates a physics guided exponential function model that quantitatively links…
Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…
The enhanced photonic spin hall effect (PSHE) plays a positive role in the flexible manipulation of photons. Here, by combining Dirac semimetals with Bragg reflector constructed by one-dimensional photonic crystal, we theoretically design a…
Deep level transient spectroscopy shows that defects created by alpha irradiation of germanium are annealed by low energy plasma ions up to a depth of several thousand lattice units. The plasma ions have energies of 2-8eV and therefore can…
Self-diffraction rings or spatial self-phase modulation (SSPM) was observed in tetra-phenyl porphyrin derivative 5,10,15,20 - meso-tetrakis (4-hydroxyphenyl) porphyrin (H2TPP(OH)4) doped in boric acid glass (BAG) at 671 nm excitation…
The energy pathways from propagating internal waves to the scales of irreversible mixing in the ocean are not fully described. In the ocean interior, the triadic resonant instability is an intrinsic destabilization process that may enhance…
We visualize the topological ladder and band inversions in PtTe$_2$ using spin-polarized photoemission spectroscopy augmented by three-dimensional momentum imaging. This approach enables the detection of spin polarization in dispersive…
The superconductor Sn$_{1-x}$In$_{x}$Te is derived from the topological crystalline insulator SnTe and is a candidate topological superconductor. So far, high-quality thin films of this material have not been available, even though such…
We have studied in-gap states in epitaxial CoFe2O4(111), which potentially acts as a perfect spin filter, grown on a Al2O3(111)/Si(111) structure by using ellipsometry, Fe L2,3-edge x-ray absorption spectroscopy (XAS), and Fe L2,3-edge…
From in-situ ellipsometric measurements during condensation of As4 molecular beam on GaAs(001) substrate the arsenic sticking coefficient was determined. For the substrate with Ga-rich surface reconstruction at 60C the sticking coefficient…
Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on…
(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging from $\approx5\times10^{18}$cm$^{-3}$ to…
Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces…
We study the superconducting(SC)-gap anisotropy of the \Gamma-centered hole Fermi surface in optimally doped FeTe_{0.6}Se_{0.4} (T_c = 14.5 K), using laser-excited angle-resolved photoemission spectroscopy (ARPES). We observe sharp…
Graphene layers are stable, hard, and relatively inert. We study how tensile stress affects $\sigma$ and $\pi$ bonds and the resulting change in the chemical activity. Stress affects more strongly $\pi$ bonds that can become chemically…
Layered chalcogenide materials have a wealth of nanoelectronics applications like resistive switching and energy-harvesting such as photocatalyst owing to rich electronic, orbital, and lattice excitations. In this work, we explore…
Collective excitations in topologically non-trivial systems have attracted considerable attention in recent years. Here we study plasmons in the Su-Schrieffer-Heeger model whose low-energy electronic band is only partially filled, such that…
We study sub-surface arsenic dopants in a hydrogen terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant related features that fall into two classes, which we call…