Related papers: Electrostatically defined Quantum Dots in a Si/SiG…
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS…
Designing coherent processes is essential for developing quantum information technologies. We study coherent dynamics of two spatially separated electrons in a coupled semiconductor double quantum dot (DQD), in which various two-qubit…
Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by $1/f$ charge noise. We investigate theoretically fluctuations of ground…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
The performance and scalability of semiconductor quantum-dot (QD) qubits are limited by electrostatic drift and charge noise that shift operating points and destabilize qubit parameters. As systems expand to large one- and two-dimensional…
We present a self-consistent Schroedinger-Poisson scheme for simulation of electrostatic quantum dots defined in gated two-dimensional electron gas formed at n-AlGaAs/GaAs heterojunction. The computational method is applied to a…
Electron dynamics in quantum dots manifests itself in spin-flip spectra through electric dipole spin resonance (EDSR). Near a neutrality point separating two different singlet charged states of a double quantum dot, charge dynamics inside a…
Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…
The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the…
A few electron double electrostatic lateral quantum dot can be transformed into a few electron triple quantum dot by applying a different combination of gate voltages. Quadruple points have been achieved at which all three dots are…
Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a…
Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor…
We investigate double quantum dots defined by electrostatic gating in semiconductor PbTe nanowire devices. We perform transport measurements to obtain charge stability diagrams distinguished by negligible separation between paired triple…
We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double…
We investigate coherent time-evolution of charge states (pseudo-spin qubit) in a semiconductor double quantum dot. This fully-tunable qubit is manipulated with a high-speed voltage pulse that controls the energy and decoherence of the…
The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states…
We theoretically model the formation of quantum dots(QDs) and quantum dot molecules(QDMs) in silicon germanium heteroepitaxy by explicitly incorporating the role of noise in a continuum theory for surface evolution in molecular beam…
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe…
We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized…
We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that…