Related papers: Characterisation of a CMOS Active Pixel Sensor for…
Purpose: Current photon-counting computed tomography detectors are limited to a pixel size of around 0.3 mm-0.5 mm due to excessive charge sharing degrading the dose efficiency and energy resolution as the pixels become smaller. In this…
Uniform large transition-edge sensor (TES) arrays are fundamental for the next generation of X-ray space observatories. These arrays are required to achieve an energy resolution $\Delta E$ < 3 eV full-width-half-maximum (FWHM) in the soft…
The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R\&D program, aiming at using 3D pixel…
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $\mu$m) in which charge is collected on an electrode, albeit by disordered and slow…
The Topmetal-M is a large area pixel sensor (18 mm * 23 mm) prototype fabricated in a new 130 nm high-resistivity CMOS process in 2019. It contains 400 rows * 512 columns square pixels with the pitch of 40 {\mu}m. In Topmetal-M, a novel…
Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high…
Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are…
The determination of the neutrino mass is an open issue in modern particle physics and astrophysics. The direct mass measurement is the only theory-unrelated experimental tool capable to probe such quantity. The HOLMES experiment aims to…
3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders…
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel…
Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $\mu$m, produced at CiS, and 100-200 $\mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and…
We have evaluated the imaging capabilities of the Timepix4 hybrid silicon pixel detector for 100 keV and 200 keV electrons in a Transmission Electron Microscope (TEM). Using the knife-edge method, we have measured the Modulation Transfer…
A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget…
Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present…
This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation.…
A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is…
Multichip modules (MCM) with 4 single photon counting MPEC 2.3 chips bump bonded to 1.3 cm x 1.3 cm large CdTe and Si semiconductor sensors as well as to single chip pixel detectors have been successfully built and operated. The MPEC 2.3…
In recent years, the performance of Scientifc Complementary Metal Oxide Semiconductor (sCMOS) sensors has been improved signifcantly. Compared with CCD sensors, sCMOS sensors have various advantages, making them potentially better devices…
We are developing an imaging polarimeter by combining a fine-pixel CMOS image sensor with a coded aperture mask as part of the cipher project, aiming to achieve X-ray polarimetry in the energy range of…
Future space-based X-ray telescope missions are likely to have significantly increased demands on detector read out rates due to increased collection area, and there will be a desire to minimize radiation damage in the interests of…