Related papers: Compact silicon double and triple dots realized wi…
We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a…
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the…
A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the inter-dot coupling. Transport through excited states is observed in the…
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and…
We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of…
We report gate-controlled quantum-dot transport in a trilayer MoSe2 device that combines a graphite back gate beneath the active region, a separate global gate for conductive access regions, and local top finger gates. In the low-backgate…
We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant…
We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a…
In this paper we review the theory of silicon nanowires. We focus on nanowires with diameters below 10 nm, where quantum effects become important and the properties diverge significantly from those of bulk silicon. These wires can be…
Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum…
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to…
We measure transport at finite bias through a double quantum dot formed by top-gates in an InAs nanowire. Pauli spin-bockade is confirmed with several electrons in the dot. This is expected due to the small exchange interactions in InAs and…
A quantum dot hybrid qubit formed from three electrons in a double quantum dot has the potential for great speed, due to presence of level crossings where the qubit becomes charge-like. Here, we show how to take full advantage of the level…
We report highly tunable control of holes in Ge/Si core/shell nanowires (NWs). We demonstrate the ability to create single quantum dots (QDs) of various sizes, with low hole occupation numbers and clearly observable excited states. For the…
We present an advanced lateral triple quantum dot made by local anodic oxidation. Three dots are coupled in a starlike geometry with one lead attached to each dot thus allowing for multiple path transport measurements with two dots per…
We investigate double quantum dots defined by electrostatic gating in semiconductor PbTe nanowire devices. We perform transport measurements to obtain charge stability diagrams distinguished by negligible separation between paired triple…
We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is…
We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra…
Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots…
Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a…