Related papers: Compact silicon double and triple dots realized wi…
We present quantum transport measurements of interacting parallel quantum dots formed in the strands of a carbon nanotube rope. In this molecular quantum dot system, transport is dominated by one quantum dot, while additional resonances…
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of…
The electronic structure of the high-T_c cuprates is studied on the basis of both "large-U" and "small-U" orbitals. A striped structure is obtained, and three types of carriers: polaron-like "stripons" carrying charge, "quasielectrons''…
Quantum-dot (QD) nanolasers integrated on a silicon photonic circuit are demonstrated for the first time. QD nanolasers based on one-dimensional photonic crystal nanocavities containing InAs/GaAs QDs are integrated on CMOS-processed silicon…
Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and…
We present a theory of electronic properties and the spin blockade phenomena in a gated linear triple quantum dot. Quadruple points where four different charge configurations are on resonance, particularly involving (1,1,1) configuration,…
Traditional silicon binary circuits continue to face challenges such as high leakage power dissipation and large area of interconnections. Multiple-Valued Logic (MVL) and nano devices are two feasible solutions to overcome these problems.…
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate…
A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit…
Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel…
Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified…
We propose a scheme for implementing quantum gates and entanglement between spin qubits in the outer dots of a triple-dot system with an empty central dot. The voltage applied to the central dot can be tuned to realize the gate. Our scheme…
We theoretically analyse the possibility to electrostatically confine electrons in circular quantum dot arrays, impressed on contacted graphene nanoribbons by top gates. Utilising exact numerical techniques, we compute the scattering…
We report high qubit coherence as well as low crosstalk and single-qubit gate errors in a superconducting circuit architecture that promises to be tileable to 2D lattices of qubits. The architecture integrates an inductively shunted cavity…
We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n…
In quantum computation, information is processed by gates that must coherently couple separate qubits. In many systems the qubits are naturally coupled, but such an always-on interaction limits the algorithms that may be implemented.…
We construct a minimal robust controlled-NOT gate with an Ising-type interaction by which elementary two-qubit gates are implemented. It is robust against inaccuracy of the coupling strength and the obtained quantum circuits are constructed…
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced potential fluctuations that can potentially impair device…
Coupled spin evolution and tunneling together with the relaxation and decoherence effects are studied for the double quantum dot formed in a semiconductor nanowire and driven by the periodic electric field. Such system represents a model of…
We apply the recently introduced Hubbard model approach to quantitatively describe the experimental charge stability diagram and tunnel coupling of silicon double quantum dot systems. The results calculated from both the generalized Hubbard…