Related papers: Spin-valley blockade in carbon nanotube double qua…
We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated…
We demonstrate experimentally that non-collinear intrinsic spin-orbit magnetic fields can be realized in a curved carbon nanotube two-segment device. Each segment, analyzed in the quantum dot regime, shows near four-fold degenerate shell…
For most chiralities, semiconducting nanotubes display topologically protected end states of multiple degeneracies. We demonstrate using density matrix renormalization group based quantum chemistry tools that the presence of Coulomb…
Pauli exclusion principle can lead to a supression of transport through double quantum dots, even if both quantum dots are connected by a resonant driving ac field. In this work, we study how this effect, known as spin blockade, can be…
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…
Spins confined in quantum dots are considered as a promising platform for quantum information processing. While many advanced quantum operations have been demonstrated, experimental as well as theoretical efforts are now focusing on the…
Spin--orbit interaction (SOI) plays a fundamental role in many low-dimensional semiconductor and hybrid quantum devices. In the rapidly evolving field of semiconductor spin qubits, SOI is an essential ingredient that can allow for ultrafast…
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on…
We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the…
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons…
We analyzed the electronic transport through a double quantum dot in the spin blockade regime. Experiments of current rectification by Pauli exclusion principle in double quantum dots were discussed. The electron and nuclei spin dynamics…
Based on the tight-binding formalism, we study the effect of side potential on the spin and valley related electronic property of $2$D honeycomb lattices with intrinsic spin-orbit coupling, such as silicene and germanene. The side potential…
The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS$_2$ monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement…
We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double quantum dot device. In the spin blockade regime, leakage current through the double quantum dot is measured and is used to extract the…
Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…
Quantum dots defined in carbon nanotubes are a platform for both basic scientific studies and research into new device applications. In particular, they have unique properties that make them attractive for studying the coherent properties…
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar…
We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field…
Few-electron states in carbon-nanotube quantum dots are studied by means of the configuration-interaction method. The peculiar non-interacting feature of the tunneling spectrum for two electrons, recently measured by Kuemmeth et al. [Nature…
Zero bias conductance per spin of nanotube double junction (NTDJ) is investigated theoretically using the tight binding model, unrestricted Hartree-Fock approximation and non-equilibrium Green's functions. NTDJ consists of two metallic…