Related papers: Bilayer graphene: gap tunability and edge properti…

Bilayer graphene cavities where electrons are confined within finite graphene flakes provide an alluring platform not only for the future nanoelectronic devices owing to the tunable energy gap but also for investigating the quantum nature…

Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence…

We present non-linear transport measurements on suspended, current annealed bilayer graphene devices. Using a multi-terminal geometry we demonstrate that devices tend to be inhomogeneous and host two different electronic phases next to each…

We describe the gated bilayer graphene system when it is subjected to intense terahertz frequency electromagnetic radiation. We examine the electron band structure and density of states via exact diagonalization methods within Floquet…

The electronic properties of doped bilayer graphene in presence of bottom and top gates have been studied and characterized by means of Density Functional Theory calculations. Varying independently the bottom and top gates it is possible to…

Zigzag nanoribbons of monolayer graphene-like two-dimensional materials host spontaneous edge magnetism at the zigzag terminations, whose configuration controls the band gap. In this article, the edge magnetism of zigzag nanoribbons of…

The X-ray edge singularity of bilayer graphene is studied by generalizing the path integral approach based on local action which was employed for monolayer graphene. In sharp contrast to the case of monolayer graphene, the bilayer graphene…

The band structure of Bernal-stacked bilayer graphene can be tuned using double-gated transistors to apply a perpendicular electric field that generates an interlayer potential energy difference $\Delta$. Dielectric breakdown limits the…

This article reviews the theoretical and experimental work related to the electronic properties of bilayer graphene systems. Three types of bilayer stackings are discussed: the AA, AB, and twisted bilayer graphene. This review covers…

Bilayers of graphitic materials have potential applications in field effect transistors (FETs). A potential difference applied between certain ionic bilayers made from insulating graphitic materials such as BN, ZnO and AlN could reduce gap…

Twist bilayer graphenes with magical angle have nearly flat band, which become strongly correlated electron systems. Herein, we propose another system based on strained bilayer graphene that have flat band at the intrinsic Fermi level. The…

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure…

Fermi surface topology plays an important role in determining the electronic properties of metals. In bulk metals, the Fermi energy is not easily tunable at the energy scale needed for reaching conditions for the Lifshitz transition - a…

Stacking two-dimensional layered materials such as graphene and transitional metal dichalcogenides with nonzero interlayer twist angles has recently become attractive because of the emergence of novel physical properties. Stacking of…

We demonstrate theoretically that quantum dots in bilayers of graphene can be realized. A position-dependent doping breaks the equivalence between the upper and lower layer and lifts the degeneracy of the positive and negative momentum…

Nanoelectromechanical systems (NEMS) constitute a class of devices lying at the interface between fundamental research and technological applications. Integrating novel materials such as graphene into NEMS allows studying their mechanical…

Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible fractional quantum Hall state to a compressible state by tuning the bandgap at a given electron density.…

The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited…

We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation. We evaluate device behavior using…

We calculate the optical sum associated with the in-plane conductivity of a graphene bilayer. A bilayer asymmetry gap generated in a field-effect device can split apart valence and conduction bands, which otherwise would meet at two K…