We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic simulations based on the self-consistent solution of the Poisson and Schroedinger equations within the NEGF formalism. We show that the concept works, but bandgap opening is not strong enough to suppress band-to-band tunneling in order to obtain a sufficiently large Ion/Ioff ratio for CMOS device operation.
@article{arxiv.0810.0128,
title = {On the possibility of tunable-gap bilayer graphene FET},
author = {G. Fiori and G. Iannaccone},
journal= {arXiv preprint arXiv:0810.0128},
year = {2009}
}