Related papers: Andreev reflection in ferrimagnetic CoFe2O4/SrRuO3…
We investigate the Andreev reflection and Josephson effect in the $\alpha$-T3 lattice which falls between graphene ($\alpha = 0$) and the dice lattice ($\alpha = 1$) by adjusting the parameter $\alpha$. In the regime of specular Andreev…
RuO$_{2}$ has been proposed as the prototypical altermagnetic material. However, several reports have recently questioned its intrinsic magnetic ordering, leading to conflicting findings, especially in thin film heterostructures pointing to…
The minority-spin Fe/MgO interface states are at the Fermi level in density functional theory (DFT), but experimental evidence and GW calculations place them slightly higher in energy. This small shift can strongly influence tunneling…
An incoming electron is reflected back as a hole at a normal-metal-superconductor interface, a process known as Andreev reflection. We predict that there exists a universal transverse shift in this process due to the effect of spin-orbit…
We study the crossed Andreev reflection and the nonlocal transport in the proximitized graphene/supercondcutor/proximitized graphene junctions with the pseudospin staggered potential and the intrinsic spin-orbit coupling. The crossed…
Recent experiments on van der Waals antiferrmagnets such as CrI3, CrCl3 and MnPS3 have shown that using atomically thin layers as tunnel barriers and measuring the temperature ($T$) and magnetic field ($H$) dependence of the conductance…
Semiconductor nanowires provide promising low-dimensional systems for the study of quantum transport phenomena in combination with superconductivity. Here we investigate the competition between the Coulomb blockade effect, Andreev…
Scattering processes in quantum materials emerge as resonances in electronic transport, including confined modes, Andreev states, and Yu-Shiba-Rusinov states. However, in most instances, these resonances are driven by a single scattering…
Resonant Andreev reflection through superconductor-carbon-nanotube devices was investigated theoretically with a focus on the superconducting proximity effect. Consistent with a recent experiment, we find that for high transparency devices…
Many proposed and realized spintronic devices involve spin injection and accumulation at an interface between a ferromagnet and a non-magnetic material. We examine the electric field, voltage profile, charge distribution, spin fluxes, and…
A magnetic "spin filter" tunnel barrier, sandwiched between a non-magnetic metal and a magnetic metal, is used to create a new magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance…
The phenomenon of crossed Andreev reflection (CAR) is known to play a key role in non-local electron transport across three-terminal normal-superconducting-normal (NSN) devices. Here we review our general theory of non-local charge…
Planar macroscopic magnetic tunnel junctions exhibit well defined zero bias anomalies when a thin layer of ferromagnetic CoFe(B) nanodots is inserted within a MgO based tunnel barrier. The conductance curves exhibit a single and a double…
Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectric tunnel junction (FTJ) associated with polarization reversal in the ferroelectric barrier layer. Here we predict that a FTJ with a…
We study Andreev reflection in graphene nanoribbon/superconductor hybrid junctions. By using a tight-binding approach and the scattering formalism we show that finite-size effects lead to notable differences with respect to the bulk…
We report electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110] vicinal substrates. The BiFeO3 films of variable thickness were deposited with SrRuO3…
We discuss a three-dimensional (3D) spin drift diffusion (SDD) model to inject spin from a ferromagnet (FM) to a normal metal (N) or semiconductor (SC). Using this model we investigate the problem of spin injection into isotropic materials…
Thin van der Waals (vdW) layered magnetic materials disclose the possibility to realize vdW heterostructures with new functionalities. Here we report on the realization and investigation of tunneling spin valves based on van der Waals…
Defects ubiquitously exist in crystal materials and usually exhibit a very different nature than the bulk matrix, and hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the…
By combining the Dirac equation of relativistic quantum mechanics with the Bogoliubov-De Gennes equation of superconductivity we investigate the electron-hole conversion at a normal-metal--superconductor interface in graphene. We find that…