Defects ubiquitously exist in crystal materials and usually exhibit a very different nature than the bulk matrix, and hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides due to the complexity of defects and difficulties in characterization. Here, we fabricate a 36.8{\deg} SrRuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance. We identify its atomic arrangement, including oxygen, using scanning transmission electron microscopy and spectroscopy. Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance is because of the dramatically reduced magnetic moments at the boundary. The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order.
@article{arxiv.1911.04108,
title = {Atomic Origin of Spin-Valve Magnetoresistance at the SrRuO3 Grain Boundary},
author = {Xujing Li and Li Yin and Zhengxun Lai and Mei Wu and Yu Sheng and Lei Zhang and Yuanwei Sun and Shulin Chen and Xiaomei Li and Jingmin Zhang and Yuehui Li and Kaihui Liu and Kaiyou Wang and Dapeng Yu and Xuedong Bai and Wenbo Mi and Peng Gao},
journal= {arXiv preprint arXiv:1911.04108},
year = {2020}
}