Related papers: Studies of resistance switching effects in metal/Y…
The ab-plane resistivity of Ba(Fe1-xRux)2As2 (x = 0.00, 0.09, 0.16, 0.21, and 0.28) was studied under nearly hydrostatic pressures, up to 7.4 GPa, in order to explore the T-P phase diagram and to compare the combined effects of…
We report on graphene-based Josephson junctions with contacts made from lead. The high transition temperature of this superconductor allows us to observe the supercurrent branch at temperatures up to $\sim 2$ K, at which point we can detect…
In this Letter we present new tunneling data on YBa$_2$Cu$_3$O$_7$ thin films by low temperature scanning tunneling spectroscopy. Unusual peak-dip-hump features, previously reported in Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$, are also found in…
The current-voltage characteristics of Au/InOx/Pb tunnel junctions exhibit peculiar zero-bias anomalies. At low temperature the zero-bias resistance attains values that are smaller than the normal state resistance by a factor that often…
The oxygen deficiency $\delta$ in YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO) plays a crucial role for affecting high-temperature superconductivity. We applied (coincident) Doppler broadening spectroscopy of the electron-positron annihilation line…
The current-voltage ($I$-$V$) characteristics of break junctions of polycrystalline La$_{1.85}$Sr$_{0.15}$CuO$_4$, Y$_{0.75}$Lu$_{0.25}$Ba$_2$Cu$_3$O$_{7-\delta}$, Bi$_{1.8}$Pb$_{0.3}$Sr$_{1.9}$Ca$_2$Cu$_3$O$_x$ and composite…
We report on the reversible, nonvolatile and polarity dependent resistive switching between superconductor and insulator states at the interfaces of a Au/YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO)/Au system. We show that the superconducting state…
Solid state ionic approaches for modifying ion distributions in getter/oxide heterostructures offer exciting potentials to control material properties. Here we report a simple, scalable approach allowing for total control of the…
The temperature dependence of the electrical resistivity of the heterostructures consisting of single crystalline LaMnO$_3$ samples with different crystallographic orientations covered by the epitaxial ferroelectric…
The current-voltage characteristics of a porous superconductor Bi2Sr2Ca2Cu3Ox (Bi2223) have been measured at temperature range from 10 to 90 K. The experimental dependences have been analyzed within the model allowing for pinning by…
Emergent phenomena at interfaces between oxides and metals can appear due to charge transfer and mass transport that modify the bulk properties. By coating the metallic oxide LaNiO$_3$ by aluminium, we fabricated a junction exhibiting a…
The superconducting proximity effect has played an important role in recent work searching for Majorana modes in thin semiconductor devices. Using transport measurements to quantify the changes in the semiconductor caused by the proximity…
Current-voltage characteristics in the insulator bordering superconductivity in disordered thin films exhibit current jumps of several orders of magnitude due to the development of a thermally bistable electronic state at very low…
In many transition metal oxides the electrical resistance is observed to undergo dramatic changes induced by large biases. In magnetite, Fe$_3$O$_4$, below the Verwey temperature, an electric field driven transition to a state of lower…
We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical…
Thin film trilayer junction of La$%_{0.67}$Sr$_{0.33}$MnO$_3$ - SrTiO$_3$ - La$_{0.67}$Sr$_{0.33}$MnO$_3$ shows a factor of 9.7 change in resistance, in a magnetic field around 100 Oe at 14K. The junction magnetoresistance is bias and…
The electrical resistance R of metallic nanocontacts subjected to controlled cyclic electromigration in ultra-high vacuum has been investigated in-situ as a function of applied voltage V. For sufficiently small contacts, i.e., large…
In this research, it is shown that there are the necessary physical conditions to originate the returning superconductivity in the thin interface layer at the contact between the normal metal and the high temperature superconductor (N-S…
We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the…
The current-voltage (I-V) properties along the c axis on Nd2-xCexCuO4 /SrTiO3 epitaxial films with x = 0.145, 0.15 were investigated. For all the samples it has been established that the I-V characteristics exhibit several resistive…