Related papers: Extremely Low Drift in Amorphous Phase Change Nano…
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…
PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to…
We performed self-consistent modelling of electrotransport and electromechanical response of solid electrolyte thin films allowing for steric effects of mobile charged defects (ions, protons or vacancies), electron degeneration and Vegard…
We report active control of the friction force at the contact between a nanoscale asperity and a La$_{0.55}$Ca$_{0.45}$MnO$_3$ (LCMO) thin film using electric fields. We use friction force microscopy under ultrahigh vacuum conditions to…
Neuromorphic computing based on spiking neural networks has the potential to significantly improve on-line learning capabilities and energy efficiency of artificial intelligence, specially for edge computing. Recent progress in…
Robustness to disorder - the defining property of any topological state - has been mostly tested in low-disorder translationally-invariant materials systems where the protecting underlying symmetry, such as time reversal, is preserved. The…
Reduced transmon qubit $T_1$ coherence times have been linked to the amorphous oxide layers formed by thin film capacitors during processing. Because Ta or Ta capped Nb capacitors exhibit overall superior qubit performance to those…
We demonstrate that memristive devices can be fabricated by tip-induced oxidation of thin metallic films using atomic force microscope. Electrical measurements of such prepared Ti/TiOx/Ti test structures confirmed their memristive behavior…
We propose an infrared power switch based on an asymmetric high-Q microcavity incorporating a metallic nanolayer in close proximity to a layer made of a phase-change material (PCM). The microcavity is designed so that when the PCM layer is…
Transition metal nitrides have received significant interest for use within plasmonic and optoelectronic devices. However, deposition temperature remains a significant barrier to the integration of transition metal nitrides as plasmonic…
A class of chalcogenide alloy materials that shows significant changes in optical properties upon an amorphous-to-crystalline phase transition has lead to development of large data capacities in modern optical data storage. Among…
Recently, chalcogenide glass based phase change materials (PCMs) have shown utility as a tuning material for a range of nanophotonic devices. Owing to their low loss, ultrafast switching speeds and wide waveband operation, PCMs are…
Phase change memory (PCM) is an emerging data storage technology, however its programming is thermal in nature and typically not energy-efficient. Here we reduce the switching power of PCM through the combined approaches of filamentary…
We measure quantum and thermal phase-slip rates using the standard deviation of the switching current in superconducting nanowires at high bias current. Our rigorous quantitative analysis provides firm evidence for the presence of quantum…
We investigate the evolution of superconductivity with decreasing film thickness in ultrathin amorphous MoGe (a-MoGe) films using a combination of sub-Kelvin scanning tunneling spectroscopy, magnetic penetration depth measurements and…
We analyze atom-surface magnetic interactions on atom chips where the magnetic trapping potentials are produced by current carrying wires made of electrically anisotropic materials. We discuss a theory for time dependent fluctuations of the…
Recently, asymmetric plasmonic nanojunctions [Karnetzky et. al., Nature Comm. 2471, 9 (2018)] have shown promise as on-chip electronic devices to convert femtosecond optical pulses to current bursts, with a bandwidth of multi-terahertz…
We have studied the internal friction and the relative change in the speed of sound of amorphous diamond-like carbon films prepared by pulsed-laser deposition from 0.3 K to room temperature. Like the most of amorphous solids, the internal…
Quantum materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take…
We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric…