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Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental…
We have measured the response of the flux-line lattice in the low T$_c$ superconductor, 2H-NbSe$_2$, to finite frequency drives. In a well-defined range of fields, temperatures, and driving amplitudes the system exhibits a variety of novel…
We have investigated the dynamics of Na ions in amorphous Na2Si2O5, a potential solid electrolyte material for Na-battery. We have employed quasielastic neutron scattering (QENS) technique in the amorphous Na2Si2O5 from 300 to 748 K to…
The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…
Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic weight elements. However, low thermal budget ferroelectric…
Conducting Polymer Dendrites (CPD) can engrave sophisticated patterns of electrical interconnects in their morphology with low-voltage spikes and few resources: they may unlock in operando manufacturing functionalities for electronics using…
Dewetting of thin polystyrene films deposited onto silicone wafers at temperatures close to the glass transition exhibits unusual dynamics and front morphologies. Here, we present a new theoretical approach of these phenomena taking into…
Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of…
Sufficiently large electric current applied to metallic nanostructures can bring them far out-of-equilibrium, resulting in non-Ohmic behaviors characterized by current-dependent resistance. We experimentally demonstrate a linear dependence…
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…
Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low…
Nanoribbons of MoS$_2$ present a unique electronic structure that consists of a semiconducting bulk bounded by metallic edges; same holds for other Transition-Metal Dichalcogenides (TMDs) (Mo-,W-,S$_{2}$,Se$_{2}$). We perform…
Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability,…
In the upcoming process to overcome the limitations of the standard von Neumann architecture, synaptic electronics is gaining a primary role for the development of in-memory computing. In this field, Ge-based compounds have been proposed as…
One of the biggest challenges in implementation of Quantum circuits or Photonic Integrated Circuits in general is the inability to create efficient relay devices due to small decoherence time, high delays and poor interconnections that…
We present thermodynamic crystallization and melting models and calculate phase change velocities in $Ge_2 Sb_2 Te_5$ based on kinetic and thermodynamic parameters. The calculated phase change velocities are strong functions of grain size,…
Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…
In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence…
Despite the huge importance of friction in regulating movement in all natural and technological processes, the mechanisms underlying dissipation at a sliding contact are still a matter of debate. Attempts to explain the dependence of…
Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing systems. NbO2-based memristors exhibit two regions of NDR at…