Non-volatile programmable silicon photonics using an ultralow loss Sb$_2$Se$_3$ phase change material
Abstract
Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability, however the materials used to date have shown prohibitively high optical losses which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material SbSe for ultralow-loss programmable silicon photonics. The favorable combination of large refractive index contrast and ultralow losses seen in SbSe facilitates an unprecedented optical phase control exceeding 10 radians in a Mach-Zehnder interferometer. To demonstrate full control over the flow of light, we introduce nanophotonic digital patterning as a conceptually new approach at a footprint orders of magnitude smaller than state of the art interferometer meshes. Our approach enables a wealth of possibilities in high-density reconfiguration of optical functionalities on silicon chip.
Keywords
Cite
@article{arxiv.2101.03623,
title = {Non-volatile programmable silicon photonics using an ultralow loss Sb$_2$Se$_3$ phase change material},
author = {Matthew Delaney and Ioannis Zeimpekis and Han Du and Xingzhao Yan and Mehdi Banakar and David J. Thomson and Daniel W. Hewak and Otto L. Muskens},
journal= {arXiv preprint arXiv:2101.03623},
year = {2021}
}
Comments
22 pages, 11 figures