Related papers: Epitaxial ferromagnetic semiconductor GdN thin fil…
The paper has been withdrawn.
%auto-ignore This paper has been withdrawn by the authors because its results have been superceded by new experimental data and new theory presented in S.-K. Mo et al., cond-mat/0212110.
This paper has been withdrawn.
This paper has been withdrawn by the author(s)
The authors have withdrawn the paper.
Using first-principles calculations, we predict a Chern insulating phase in thin films of the ferromagnetic semi-metal GdN. In contrast to previously proposed Chern insulator candidates, which mostly rely on honeycomb lattices, this system…
This paper has been withdrawn by the authors
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the…
We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties…
In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that…
While vertical GaN-on-silicon architectures promise a transformative leap in cost-effective power electronics and high-resolution micro-LEDs, their deployment remains bottlenecked by the high electrical resistance of conventional epitaxial…
This paper is withdrawn.
This paper has been withdrawn due to copyright reasons.
This paper has been withdrawn by the author
This paper has been withdrawn by the author, due to the insecurity against attacks received in quant-ph/0605027v5.
This paper has been withdrawn by the author(s) due to the discussion was made on the basis of linear term merely, which is incomplete.
Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene…
%auto-ignore Paper has been withdrawn by the author.
This paper has been withdrawn by the author(s),
This paper has been withdrawn.