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This paper has been withdrawn by the author(s)
This paper has been withdrawn by the author.
This paper has been withdrawn by the authors due to a numerical error. A revised version will be posted shortly.
This paper has been withdrawn by the author, since now all four parts of the review are available as a single file 0804.1639. I also made some revision of the text in order to avoid misprints and some inaccurate expressions.
The paper contains an error in Eqs. (14) and (15) and has been withdrawn by the author.
%auto-ignore The paper has been withdrawn by authors. The completely revised version can be found under the following preprint-no: hep-ph/9910282.
This paper has been withdrawn by the author due to a crucial problem associated with Figs. 2 and 3.
Growth of perovskite oxide thin films on Si in crystalline form has long been a critical obstacle for the integration of multifunctional oxides into Si-based technologies. In this study, we propose pulsed laser deposition of a crystalline…
All epitaxial GeSn-on-insulator (GeSnOI) heterostructures have been realized by conventional molecular beam epitaxy of both GeSn and a thin Gd2O3 insulating layer, on Si(111) substrates. Analysis of the crystal and surface quality by…
This paper has been withdrawn.
This paper has been withdrawn by the author.
This paper has been withdrawn.
This paper has been retracted.
This paper has been withdrawn due to submission of subsequent versions as a new preprint
This paper has been withdrawn by the author.
This paper has been withdrawn
This paper has been withdrawn by the author due to the inaccurate result.
Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and…
This paper has been withdrawn keeping in view of publication elsewhere with some appropriate modifications.
Spin-gapless semiconductors with their unique band structures have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have successfully deposited the thin…