Related papers: Epitaxial ferromagnetic semiconductor GdN thin fil…

This paper has been withdrawn.

This paper is being withdrawn.

This paper has been withdrawn by the author.

We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 {\Omega}.cm and carrier concentrations of 10E16 cm-3 are obtained for films with…

This paper has been withdrawn

Submission has been withdrawn due to copyright issues.

The paper is withdrawn.

This paper has been withdrawn by the authors

This paper has been withdrawn by the author due to an error

This paper has been withdrawn by the author.

This paper has been withdrawn by the author,due a immature idea.

This paper has been withdrawn, because relevant publications, related to the subject of the paper, were overlooked by the author.

This paper has been withdrawn by the authors, since it had been the excessive repetition of the part of hep-ph/0310190.

This paper has been withdrawn by the authors, due to the IEEE copyright policy requirements.

This paper has been withdrawn by the author.

This paper has been withdrawn by the author since it contains errors.

This paper has been withdrawn by the author.

The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this…

This paper has been withdrawn by the author, due to a significant error in section 4.3.1.

This paper has been withdrawn by the authour.