Related papers: HFinFET: A Scalable, High Performance, Low Leakage…

In this work, using 3D device simulation, we perform an extensive gate to source/drain underlap optimization for the recently proposed hybrid transistor, HFinFET, to show that the underlap lengths can be suitably tuned to improve the on-off…

Comparators have multifarious applications in various fields, especially used in analog to digital converters. Over the years, we have seen many different designs of single stage, dynamic latch type and double tail type comparators based on…

The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of…

We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and…

Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and…

In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to width aspect ratio with high-k dielectric materials to study the optimized design for chemical-FETs to provide higher transconductance (and…

The continuous scaling of semiconductor technology has pushed the footprint of logic devices below 50 nm. Currently, logic standard cells with one single fin are being investigated to increase the integration density, although such options…

An analysis of recent experimental data for high-performance In0.7Ga0.3As high electron mobility transistors (HEMTs) is presented. Using a fully quantum mechanical, ballistic model, we simulate In0.7Ga0.3As HEMTs with gate lengths of LG =…

Recently, we proposed a novel transistor architecture for 3D stacked FETs called Flip FET (FFET), featuring N/P transistors back-to-back stacked and dual-sided interconnects. With dual-sided power rails and signal tracks, FFET can achieve…

Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…

We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices'…

GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a wide bandgap and higher critical field strength compared to…

As the conventional scaling of logic devices comes to an end, functional wafer backside and 3D transistor stacking are consensus for next-generation logic technology, offering considerable design space extension for powers, signals or even…

Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…

In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current…

An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using…

In this work, we propose a new Stepped Oxide Hetero-Material Trench (SOHMT) power MOSFET with three sections in the trench gate (an N+ poly gate sandwiched between two P+ poly gates) and having different gate oxide thicknesses (increasing…

We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…

This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. The…

Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of…