Related papers: A Memadmittance Systems Model for Thin Film Memory…
In this study, we design a reservoir computing (RC) network by exploiting short- and long-term memory dynamics in Au/Ti/MoS$_2$/Au memristive devices. The temporal dynamics is engineered by controlling the thickness of the Chemical Vapor…
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been…
The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such…
Transition metal oxides (TMOs) are complex electronic systems which exhibit a multitude of collective phenomena. Two archetypal examples are VO2 and NdNiO3, which undergo a metal-insulator phase-transition (MIT), the origin of which is…
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…
In conventional digital computers, data and information are represented in binary form and encoded in the steady states of transistors. They are then processed in a quasi-static way. However, with transistors approaching their physical…
Activation functions are widely used in neural networks to decide the activation value of the neural unit based upon linear combinations of the weighted inputs. The effective implementation of activation function is highly important, as…
A powerful time series analysis modeling technique is presented to describe cycle-to-cycle variability in memristors. These devices show variability linked to the inherent stochasticity of device operation and it needs to be accurately…
Several devices exhibiting memory effects have shown up in nonlinear circuit theory in recent years. Among others, these circuit elements include Chua's memristors, as well as memcapacitors and meminductors. These and other related devices…
We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual…
Memristors offer significant advantages as in-memory computing devices due to their non-volatility, low power consumption, and history-dependent conductivity. These attributes are particularly valuable in the realm of neuromorphic circuits…
A simple and unambiguous test has been recently suggested [J. Phys. D: Applied Physics, 52, 01LT01 (2018)] to check experimentally if a resistor with memory is indeed a memristor, namely a resistor whose resistance depends only on the…
In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential…
The current work proposes a novel scheme for developing a light-activated non-filamentary memristor device by fabricating an Au-nanoparticle embedded HfO$_2$-bilayer/p-Si MOS structure. Under illumination, the electrons in such embedded…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
We derive phenomenological model for endurance-write time switching tradeoff for nonvolatile memories with thermally activated switching mechanisms. The model predicts linear to cubic dependence of endurance on write time for metal oxide…
The memristors are expected to be fundamental devices for neuromorphic systems and switching applications. For example, the device made of a sandwiched layer of poly(N-vinylcarbazole) and reduced graphene composite between asymmetric…
Memristor (resistor with memory), inductor with memory (meminductor) and capacitor with memory (memcapacitor) have different roles to play in novel computing architectures. We found that a coil with a magnetic core is an inductor with…
Memristor, memory resistor, is an emerging technology for computational memory. Number of different memristor models are available based on the physical experiments. To use memristor as a computational memory element, one should know how…
Pushing the frontiers of time-series information processing in the ever-growing domain of edge devices with stringent resources has been impeded by the systems' ability to process information and learn locally on the device. Local…