Related papers: Prediction of extremely long electron spin lifetim…
Long carrier spin lifetimes are a double-edged sword for the prospect of constructing "spintronic" logic devices: Preservation of the logic variable within the transport channel or interconnect is essential to successful completion of the…
We propose a strategy to obtain conducting organic materials with fully spin-polarized Fermi surface, lying at a singular flat band, with antiferromagnetically coupled magnetic moments that reside in pi-orbitals of nanographenes. We…
Half-metallicity (HM) offers great potential for engineering spintronic applications, yet only few magnetic materials present metallicity in just one spin channel. In addition, most HM systems become magnetically disordered at temperatures…
We survey recent work on designing and evaluating quantum computing implementations based on nuclear or bound-electron spins in semiconductor heterostructures at low temperatures and in high magnetic fields. General overview is followed by…
The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different…
We directly measure the hole spin lifetime in ferromagnetic GaMnAs via time- and polarization-resolved spectroscopy. Below the Curie temperature Tc, an ultrafast photoexcitation with linearly-polarized light is shown to create a…
Magnetic molecules deposited on surfaces are a promising platform to individually address and manipulate spins. Long spin excitation lifetimes are necessary to utilize them in quantum information processing and data storage. Normally,…
We describe an experiment in which Bose-Einstein condensates and cold atom clouds are held by a microscopic magnetic trap near a room temperature metal wire 500 $\mu$m in diameter. The ensemble of atoms breaks into fragments when it is…
Monte Carlo simulations are performed to study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The density matrix description of the spin polarization is incorporated in the simulation algorithm. The…
First-principles calculations of the inelastic lifetime of low-energy electrons in Al, Mg, Be, and Cu are reported. Quasiparticle damping rates are evaluated from the knowledge of the electron self-energy, which we compute within the GW…
We study theoretically the lifetime of magnetically trapped atoms in the close vicinity of a type-II superconducting surface, in the context of superconducting atom-chips. We account for the magnetic noise created at the cloud position by…
We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several…
We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as…
We present an ab initio calculation of the k and spin-resolved electronic lifetimes in the half-metallic Heusler compounds Co(2)MnSi and Co(2)FeSi. We determine the spin-flip and spin-conserving contributions to the lifetimes and study in…
Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and…
While microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in…
The longest spin lifetimes in bulk n-GaAs exceed 100 ns for doping concentrations near the metal-insulator transition (J.M. Kikkawa, D.D. Awschalom, Phys. Rev. Lett. 80, 4313 (1998)). The respective electronic states have yet not been…
Since the discovery of the giant magnetoresistance (GMR) effect the use of the intrinsic angular momentum of the electrons has opened up new spin based device concepts. The two channel model of spin-up and spin-down electrons with…
Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises…
The persistent spin helix (PSH) that has been widely and exclusively studied in zinc-blende structures is revealed for the first time on the surface of a wurtzite structure. Through first-principles calculations of the ZnO(10-10) surface, a…