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The oscillatory reconnection mechanism is investigated for a parameter study of eight orders of magnitude of resistivity, with a particular interest in the evolution of the oscillating current density at the null point and its associated…

Solar and Stellar Astrophysics · Physics 2024-03-26 Jordan Talbot , James A. McLaughlin , Gert J. J. Botha , Mark Hancock

Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural…

The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based…

Optical response of artificial composite nanoscale molecules comprising a closely spaced noble metal nanoparticle and a semiconductor quantum dot have been studied theoretically. We consider a system composed of an Au particle and CdSe or…

Quantum Physics · Physics 2010-12-30 A. V. Malyshev , V. A. Malyshev

Memory-forming properties introduce a new paradigm to the design of adaptive materials. In dense suspensions, an adaptive response is enabled by non-Newtonian rheology; however, typical suspensions have little memory, which implies rapid…

Soft Condensed Matter · Physics 2025-03-13 Hojin Kim , Samantha M. Livermore , Stuart J. Rowan , Heinrich M. Jaeger

Nanoscale molecular junctions are celebrated nanoelectronic devices for mimicking several electronic functions including rectifiers, sensors, wires, switches, transistors, and memory but capacitive behavior is nearly unexplored. Capacitors…

Applied Physics · Physics 2023-03-29 Ankur Malik , Ritu Gupta , Prakash Chandra Mondal

The superconducting proximity effect has played an important role in recent work searching for Majorana modes in thin semiconductor devices. Using transport measurements to quantify the changes in the semiconductor caused by the proximity…

Superconductivity · Physics 2014-02-26 Michael Vissers , Victor K. Chua , Stephanie A. Law , Smitha Vishveshwara , James N. Eckstein

Josephson junctions containing ferromagnetic layers have generated interest for application in cryogenic memory. In a junction containing both a magnetically hard fixed layer and soft free layer with carefully chosen thicknesses, the…

Superconductivity · Physics 2019-04-22 Alexander E. Madden , Joshua C. Willard , Reza Loloee , Norman O. Birge

In layered LiNixMnyCozO2 cathode material for lithium-ion batteries, the spins of transition metal (TM) ions construct a two-dimensional triangular networks, which can be considered as a simple case of geometrical frustration. By performing…

Transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new…

Strongly Correlated Electrons · Physics 2014-07-04 Jian-Xin Zhu , Xiao-Dong Wen , J. T. Haraldsen , Mi He , C. Panagopoulos , Elbert E. M. Chia

Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions,…

Condensed Matter · Physics 2009-10-31 F. Leonard , J. Tersoff

Using metal-ferroelectric junctions as switchable diodes was proposed several decades ago. This was shown to actually work in PbZr(1-x)TixO3 (PZT) by Blom et al. [P.W. M. Blom et al., Phys. Rev. Lett. 73, 2107 (1994)], who reported…

Materials Science · Physics 2012-12-04 Saeedeh Farokhipoor , Beatriz Noheda

Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down…

Materials Science · Physics 2008-08-27 Patryk Krzysteczko , Xinli Kou , Karsten Rott , Andy Thomas , Günter Reiss

The reversibility and cyclability of anionic redox in battery electrodes hold the key to its practical employments. Here, through mapping of resonant inelastic X-ray scattering (mRIXS), we have independently quantified the evolving redox…

Niobium offers the benefit of increased operating temperatures and frequencies for Josephson junctions, which are the core component of superconducting devices. However existing niobium processes are limited by more complicated fabrication…

Quantum Physics · Physics 2024-02-23 Alexander Anferov , Kan-Heng Lee , Fang Zhao , Jonathan Simon , David I. Schuster

In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission…

Mesoscale and Nanoscale Physics · Physics 2014-02-07 S. Boyn , S. Girod , V. Garcia , S. Fusil , S. Xavier , C. Deranlot , H. Yamada , C. Carrétéro , E. Jacquet , M. Bibes , A. Barthélémy , J. Grollier

The ramp reversal memory (RRM) is a non-volatile memory effect previously observed in correlated oxides exhibiting temperature-driven metal-insulator transitions (MITs). In essence, when a system displaying RRM is heated to a specific…

Strongly Correlated Electrons · Physics 2025-07-08 Avital Fried , Ouriel Gotesdyner , Irena Feldman , Amit Kanigel , Amos Sharoni

To investigate the properties of iron-based superconductors, we examined different kinds of Josephson junctions using Co-doped Ba-122 thin films. Based on bicrystalline SrTiO3 substrates we prepared grain boundary (GB) junctions, which…

In this work we give a characterization of the RF effect of memory switching on Nb-Al/AlOx-(Nb)-Pd$_{0.99}$Fe$_{0.01}$-Nb Josephson junctions as a function of magnetic field pulse amplitude and duration, alongside with an electrodynamical…

Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial…