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The oscillatory reconnection mechanism is investigated for a parameter study of eight orders of magnitude of resistivity, with a particular interest in the evolution of the oscillating current density at the null point and its associated…
Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural…
The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based…
Optical response of artificial composite nanoscale molecules comprising a closely spaced noble metal nanoparticle and a semiconductor quantum dot have been studied theoretically. We consider a system composed of an Au particle and CdSe or…
Memory-forming properties introduce a new paradigm to the design of adaptive materials. In dense suspensions, an adaptive response is enabled by non-Newtonian rheology; however, typical suspensions have little memory, which implies rapid…
Nanoscale molecular junctions are celebrated nanoelectronic devices for mimicking several electronic functions including rectifiers, sensors, wires, switches, transistors, and memory but capacitive behavior is nearly unexplored. Capacitors…
The superconducting proximity effect has played an important role in recent work searching for Majorana modes in thin semiconductor devices. Using transport measurements to quantify the changes in the semiconductor caused by the proximity…
Josephson junctions containing ferromagnetic layers have generated interest for application in cryogenic memory. In a junction containing both a magnetically hard fixed layer and soft free layer with carefully chosen thicknesses, the…
In layered LiNixMnyCozO2 cathode material for lithium-ion batteries, the spins of transition metal (TM) ions construct a two-dimensional triangular networks, which can be considered as a simple case of geometrical frustration. By performing…
Transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new…
Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions,…
Using metal-ferroelectric junctions as switchable diodes was proposed several decades ago. This was shown to actually work in PbZr(1-x)TixO3 (PZT) by Blom et al. [P.W. M. Blom et al., Phys. Rev. Lett. 73, 2107 (1994)], who reported…
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down…
The reversibility and cyclability of anionic redox in battery electrodes hold the key to its practical employments. Here, through mapping of resonant inelastic X-ray scattering (mRIXS), we have independently quantified the evolving redox…
Niobium offers the benefit of increased operating temperatures and frequencies for Josephson junctions, which are the core component of superconducting devices. However existing niobium processes are limited by more complicated fabrication…
In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission…
The ramp reversal memory (RRM) is a non-volatile memory effect previously observed in correlated oxides exhibiting temperature-driven metal-insulator transitions (MITs). In essence, when a system displaying RRM is heated to a specific…
To investigate the properties of iron-based superconductors, we examined different kinds of Josephson junctions using Co-doped Ba-122 thin films. Based on bicrystalline SrTiO3 substrates we prepared grain boundary (GB) junctions, which…
In this work we give a characterization of the RF effect of memory switching on Nb-Al/AlOx-(Nb)-Pd$_{0.99}$Fe$_{0.01}$-Nb Josephson junctions as a function of magnetic field pulse amplitude and duration, alongside with an electrodynamical…
Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial…