English
Related papers

Related papers: Experimental Study of Resistive Bistability in Met…

200 papers

Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform…

Microscopic description in the study of immiscibility and segregating properties of liquid metallic binary alloys has gained a renewed scientific and technological interests during the last eight years for the physicists, metallurgists and…

Other Condensed Matter · Physics 2021-01-01 G M Bhuiyan

Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to…

Multiterminal measurements have typically been employed to examine electronic properties of strongly correlated electronic materials such as transition metal oxides without the influence of contact effects. In contrast, in this work we…

Strongly Correlated Electrons · Physics 2010-12-01 A. A. Fursina , R. G. S. Sofin , I. V. Shvets , D. Natelson

Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…

Applied Physics · Physics 2020-04-27 Beatriz Martín-García , Davide Spirito , Roman Krahne , Iwan Moreels

Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…

In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new…

We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a…

Thick adhesive layers have potential structural application in ship construction for the joining of a composite superstructure to a steel hull. The purpose of this study is to develop a mechanics model for the adhesive fracture of such lap…

Materials Science · Physics 2020-12-30 Sina Askarinejad , Emilio Martínez-Pañeda , I. Ivan Cuesta , Norman A. Fleck

The increasing availability of a variety of two-dimensional materials has generated enormous growth in the field of nanoengineering and nanomechanics. Recent developments in thin film synthesis have enabled the fabrication of freestanding…

Applied Physics · Physics 2021-08-25 Varun Harbola , Ruijuan Xu , Samuel Crossley , Prastuti Singh , Harold Y. Hwang

The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces…

Materials Science · Physics 2009-11-13 H. Dias Alves , A. S. Molinari , H. Xie , A. F. Morpurgo

High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emergent Internet of Things (IOT) arena. Here, we…

With the rapid development of economy, the consumption of fossil fuels, and the increasing environment pollution, there is in urgent need of seeking clean and renewable energy sources, as well as highly efficient and low-cost energy storage…

Applied Physics · Physics 2019-07-22 Jing Zhang , Yingxue Cui , Guangcun Shan

High quality Nb-based superconductor-insulator-superconductor (SIS) junctions with Al oxide (AlO$_x$) tunnel barriers grown from Al overlayers are widely reported in the literature. However, the thin barriers required for high critical…

The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with…

Materials Science · Physics 2021-12-15 A. S. Vokhmintsev , I. A. Petrenyov , R. V. Kamalov , I. A. Weinstein

Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable…

We have developed a combined photolithography and electron-beam lithography fabrication process for sub-\mum to \mum-size Nb/Al-AlOx/Nb Josephson junctions. In order to define the junction size and protect its top electrode during anodic…

Superconductivity · Physics 2011-02-14 Christoph Kaiser , J. M. Meckbach , K. Ilin , J. Lisenfeld , R. Schäfer , A. V. Ustinov , M. Siegel

My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…

Materials Science · Physics 2020-11-17 Vincent Garcia

The alloying effect on the lattice parameters, isostructural mixing enthalpies and ductility of the ternary nitride systems Cr1-xTMxN (TM=Sc, Y; Ti, Zr, Hf; V, Nb, Ta; Mo, W) in the cubic B1 structure has been investigated using…

Materials Science · Physics 2014-07-10 Liangcai Zhou , David Holec , Paul. H. Mayrhofer

The study of strong electron correlations in transition metal oxides with modern microscopy and diffraction techniques unveiled a fascinating world of nanosize textures in the spin, charge, and crystal structure. Examples range from high…

Strongly Correlated Electrons · Physics 2007-05-23 G. Papavassiliou , M. Pissas , M. Belesi , M. Fardis , D. Stamopoulos , A. Kontos , M. Hennion , J. Dolinsek , J. P. Ansermet , C. Dimitropoulos