Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped junctions in particular may be suitable for device integration.
@article{arxiv.cond-mat/0010456,
title = {Negative differential resistance in nanotube devices},
author = {F. Leonard and J. Tersoff},
journal= {arXiv preprint arXiv:cond-mat/0010456},
year = {2009}
}
Comments
4 pages, 4 figures, to appear in Physical Review Letters